Color centers induced in Y3Al5O12 single crystals by swift heavy ions and reactor neutrons

2007 ◽  
Vol 256 (1) ◽  
pp. 266-271 ◽  
Author(s):  
M. Izerrouken ◽  
A. Meftah ◽  
L. Guerbous ◽  
M. Nekkab
Keyword(s):  
Single Crystals ◽  
Heavy Ions ◽  
Color Centers ◽  
Swift Heavy Ions

Surface modifications of LiNbO3 single crystals induced by swift heavy ions

1996 ◽  
Vol 107 (1-4) ◽  
pp. 194-198 ◽  
Author(s):  
B. Canut ◽  
S.M.M. Ramos ◽  
R. Brenier ◽  
P. Thevenard ◽  
J.L. Loubet ◽  
...  
Keyword(s):  
Single Crystals ◽  
Heavy Ions ◽  
Surface Modifications ◽  
Swift Heavy Ions

3D Nanofabrication of Rutile TiO2 Single Crystals with Swift Heavy-Ions

2005 ◽  
pp. 207-223
Author(s):  
Koichi Awazu ◽  
Ken-ichi Nomura ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki
Keyword(s):  
Single Crystals ◽  
Heavy Ions ◽  
Rutile Tio2 ◽  
Swift Heavy Ions

Radiation damage caused by swift heavy ions in CaF2 single crystals

2016 ◽  
Vol 90 ◽  
pp. 18-22 ◽  
Author(s):  
Ruslan Assylbayev ◽  
Abdirash Akilbekov ◽  
Alma Dauletbekova ◽  
Aleksandr Lushchik ◽  
Evgeni Shablonin ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Single Crystals ◽  
Heavy Ions ◽  
Swift Heavy Ions

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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