Fabrication of buffer layers by metal-organic deposition using 2-ethylhexanates

One embodiment of YBa2Cu3O7-x (YBCO)-coated conductors consists of YBCO film grown using a metal-organic deposition (MOD) process on a buffer layer stack deposited on a Ni-W substrate. A possible alternative is to replace the multilayer buffer stack with a single layer of LaMnO3 (LMO) grown by MOD. A suitable temperature (T) – oxygen partial pressure (PO2) process-window to grow LMO films via MOD on Ni substrates has been identified. Untextured LMO was grown on pure Ni. However, we have not been able to grow phase-pure LMO films on either bare or Y2O3-coated, biaxially textured Ni-5W (at.%) due to the incongruent, overlapping requirements of having the PO2 low enough to not oxidize the Ni-5W substrate but high enough to convert the metal-organic precursors to LMO and the relatively high temperatures needed to form an epitaxial film in an MOD process. The main problem is that tungsten from the substrate reacts with cations in the overlying film forming tungstates when the films are processed in the T-PO2 window.

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Metal-organic deposition of biaxially textured CeO2–based buffer layers

Materials Letters ◽

10.1016/j.matlet.2009.01.038 ◽

2009 ◽

Vol 63 (9-10) ◽

pp. 800-802 ◽

Cited By ~ 9

Author(s):

Young-Kuk Kim ◽

Jaimoo Yoo ◽

Kookchae Chung ◽

Xiolin Wang ◽

Shi Xue Dou

Keyword(s):

Buffer Layers ◽

Metal Organic ◽

Metal Organic Deposition

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Strontium titanate buffer layers deposited on rolled Ni substrates with metal organic deposition

Superconductor Science and Technology ◽

10.1088/0953-2048/16/8/312 ◽

2003 ◽

Vol 16 (8) ◽

pp. 901-906 ◽

Cited By ~ 25

Author(s):

Y X Zhou ◽

S Bhuiyan ◽

S Scruggs ◽

H Fang ◽

M Mironova ◽

...

Keyword(s):

Strontium Titanate ◽

Buffer Layers ◽

Metal Organic ◽

Metal Organic Deposition

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Epitaxial Growth of La0.7Ba0.3MnO3Thin Films on SrTiO3and LaAlO3Substrates by Metal-Organic Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2530 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2530-2533 ◽

Cited By ~ 4

Author(s):

Kais Daoudi ◽

Tetsuo Tsuchiya ◽

Tomohiko Nakajima ◽

Iwao Yamaguchi ◽

Takaaki Manabe ◽

...

Keyword(s):

Epitaxial Growth ◽

Metal Organic ◽

Metal Organic Deposition

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Metal-Organic Deposition of Epitaxial La0.7Sr0.3CoO3 Thin Films on LaAlO3 Substrates

Crystal Structure Theory and Applications ◽

10.4236/csta.2015.41001 ◽

2015 ◽

Vol 04 (01) ◽

pp. 1-8

Author(s):

Kais Daoudi ◽

Zied Othmen ◽

Saoussen El Helali ◽

Meherzi Oueslati ◽

Tetsuo Tsuchiya

Keyword(s):

Thin Films ◽

Metal Organic ◽

Metal Organic Deposition

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Large Temperature Coefficient of Resistance in La0.7Ca0.3MnO3Thin Films Obtained by Metal Organic Deposition Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1054 ◽

2004 ◽

Vol 43 (No. 8B) ◽

pp. L1054-L1056 ◽

Cited By ~ 13

Author(s):

Kais Daoudi ◽

Tetsuo Tsuchiya ◽

Susumu Mizuta ◽

Iwao Yamaguchi ◽

Takaaki Manabe ◽

...

Keyword(s):

Temperature Coefficient ◽

Deposition Process ◽

Large Temperature ◽

Temperature Coefficient Of Resistance ◽

Metal Organic ◽

Metal Organic Deposition

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Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

MRS Proceedings ◽

10.1557/proc-1068-c06-09 ◽

2008 ◽

Vol 1068 ◽

Cited By ~ 5

Author(s):

Tsuneo Ito ◽

Yutaka Terada ◽

Takashi Egawa

Keyword(s):

Sapphire Substrate ◽

Deep Level ◽

Buffer Layers ◽

Si Substrate ◽

Electron Traps ◽

Organic Vapor ◽

Pair Number ◽

Metal Organic ◽

Transient Spectroscopy ◽

Gan On Si

ABSTRACTDeep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it behaves like point-defect due to based on the analysis by electron capture kinetics, in spite of having high dislocation density of the order of 1010 cm−3.

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