Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

2008 ◽  
Vol 1068 ◽  
Author(s):  
Tsuneo Ito ◽  
Yutaka Terada ◽  
Takashi Egawa
Keyword(s):  
Sapphire Substrate ◽  
Deep Level ◽  
Buffer Layers ◽  
Si Substrate ◽  
Electron Traps ◽  
Organic Vapor ◽  
Pair Number ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Gan On Si

ABSTRACTDeep level electron traps in n-GaN grown by metal organic vapor phase epitaxy (MOVPE) on Si (111) substrate were studied by means of deep level transient spectroscopy (DLTS). The growth of n-GaN on different pair number of AlN/GaN superlattice buffer layers (SLS) system and on c-face sapphire substrate are compared. Three deep electron traps labeled E4 (0.7-0.8 eV), E5 (1.0-1.1 eV), were observed in n-GaN on Si substrate. And the concentrations of these traps observed for n-GaN on Si are very different from that on sapphire substrate. E4 is the dominant of these levels for n-GaN on Si substrate, and it behaves like point-defect due to based on the analysis by electron capture kinetics, in spite of having high dislocation density of the order of 1010 cm−3.

Deep Defects in Fe-Doped GaN Layers Analysed by Electrical and Photoelectrical Spectroscopic Methods

2003 ◽  
Vol 798 ◽  
Author(s):  
H. Witte ◽  
K. Fluegge ◽  
A. Dadgar ◽  
A. Krtschil ◽  
A. Krost ◽  
...  
Keyword(s):  
Deep Level ◽  
Iron Doping ◽  
Defect Level ◽  
Temperature Dependent ◽  
Organic Vapor ◽  
Sapphire Substrates ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
P Type ◽  
Co Doped

ABSTRACTThe electrical activity of iron in Fe- doped, and in Si and Mg co-doped GaN layers grown on sapphire substrates by metal organic vapor phase epitaxy was studied as shown by temperature dependent Hall Effect (TDH) measurements. In all samples iron doping generates an acceptor defect, which compensates donors in n-type GaN. Furthermore, iron doping causes strong potential inhomogeneities, which decrease the Hall mobility in the layers. To verify, if iron creates only hole traps, defects in n-type Si:Fe and Fe doped samples were investigated. The well known dominant electron traps in n-type GaN at 520 – 550 meV and 480 meV were found by deep level transient spectroscopy and thermal admittance spectroscopy, respectively. A high Fe-doped GaN layer shows a low p-type conductivity dominated by the iron acceptor. An activation energy of EV+ 460 meV was determined by TDH indicating, that the iron acceptor correlates with this defect level.

scholarly journals Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy

2000 ◽  
Vol 5 (S1) ◽  
pp. 936-942 ◽  
Author(s):  
H. Witte ◽  
A. Krtschil ◽  
M. Lisker ◽  
D. Rudloff ◽  
J. Christen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Deep Level ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Zero Bias ◽  
Fermi Level Pinning ◽  
Organic Vapor ◽  
Pinning Effect ◽  
Metal Organic ◽  
Transient Spectroscopy

In GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects detected by thermal admittance spectroscopy as compared for deep level transient spectroscopy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.

Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy

1999 ◽  
Vol 595 ◽  
Author(s):  
H. Witte ◽  
A. Krtschil ◽  
M. Lisker ◽  
D. Rudloff ◽  
J. Christen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Deep Level ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Zero Bias ◽  
Fermi Level Pinning ◽  
Organic Vapor ◽  
Pinning Effect ◽  
Metal Organic ◽  
Transient Spectroscopy

AbstractIn GaN layers grown by molecular beam epitaxy as well as metal organic vapor phase epitaxy significant differences were found in the appearance of deep defects de-tected by thermal admittance spectroscopy as compared for deep level transient spectros-copy measurements. While, thermal admittance spectroscopy measurements which were made under zero bias conditions only show thermal emissions at activation energies between 130 and 170 meV, further deep levels existing in these GaN layers were evidenced by transient spectrocopy. This discrepancy is explained by a pinning effect of the Fermi level at the metal / GaN interface induced by high a concentration of the deep levels showing up in thermal admittance spectroscopy. We compare our results with a GaAs:Te Schottky- diode as a refernec sample. Here, both spectroscopic methods give exactly the same deep level emissions.

Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4889-4891 ◽  
Author(s):  
E. PŁaczek-Popko ◽  
J. Trzmiel ◽  
E. Zielony ◽  
S. Grzanka ◽  
R. Czernecki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Transient Spectroscopy

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Deep Electron Traps in AlAs-GaAs Superlattices as Studied by Deep-Level Transient Spectroscopy

1988 ◽  
Vol 27 (Part 1, No. 2) ◽  
pp. 192-195 ◽  
Author(s):  
Kikuo Kobayashi ◽  
Masahiko Morita ◽  
Norihiko Kamata ◽  
Takeo Suzuki
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Transient Spectroscopy
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