Crystal structure of the ternary semiconductor compound thallium gallium sulfide, TlGaS2

2007 ◽  
Vol 391 (2) ◽  
pp. 385-388 ◽  
Author(s):  
G.E. Delgado ◽  
A.J. Mora ◽  
F.V. Pérez ◽  
J. González
2019 ◽  
Author(s):  
N. Munjal ◽  
A. Das Majumdar ◽  
G. Kaur ◽  
Pavas ◽  
S. Sharma ◽  
...  

Heliyon ◽  
2020 ◽  
Vol 6 (1) ◽  
pp. e03196 ◽  
Author(s):  
M. Mobarak ◽  
M.A. Zied ◽  
Massaud Mostafa ◽  
M. Ashari

2020 ◽  
Vol 24 ◽  
pp. 2290-2294
Author(s):  
Neha Munjal ◽  
Gopal Rizal ◽  
Agnibhav Das Majumdaar ◽  
Gurjeet Kaur ◽  
Uma Kamboj ◽  
...  

2018 ◽  
Vol 33 (3) ◽  
pp. 237-241 ◽  
Author(s):  
Gerzon E. Delgado ◽  
Luigi Manfredy ◽  
S. A. López-Rivera

The crystal structure of the partially ordered vacancy compound Cu2In14/3□4/3Se8, belonging to the system I3-III7-□2-VI12, was analyzed using X-ray powder diffraction data. Several structural models were derived from the structure of the selenium-rich phase β-Cu0.39In1.2Se2 by permuting the cations in the available Wyckoff positions. The refinement of the best model by the Rietveld method in the tetragonal space group P$\overline 4 $ 2c (No 112), with unit-cell parameters a = 5.7487(3) Å, c = 11.5106(6) Å, V = 380.40(3) Å3, led to Rp = 9.0%, Rwp = 9.9%, Rexp = 7.2%, S = 1.4 for 134 independent reflections. This model has the following Wyckoff site atomic distribution: Cu in 2e (0,0,0); In in 2b (½,0,¼), 2d (0,½,¼), and 2f (½,½,0);□ in 2f (½,½,0); Se in 8n (x,y,z).


1984 ◽  
Vol 10 ◽  
pp. 217-223 ◽  
Author(s):  
E.R. de Gil ◽  
D.Gómez C. ◽  
A.V. Rivera ◽  
A. López-Rivera

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