Quasistationary states in single and double GaAs–(Ga,Al)As quantum wells: Applied electric field and hydrostatic pressure effects

2014 ◽  
Vol 442 ◽  
pp. 74-80 ◽  
Author(s):  
A.M. Schönhöbel ◽  
J.A. Girón-Sedas ◽  
N. Porras-Montenegro
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Field ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Pressure Effects

BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1753-1756 ◽  
Author(s):  
A. MONTES ◽  
A. L. MORALES ◽  
C. A. DUQUE
Keyword(s):  
Wave Function ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Donor Impurity ◽  
External Hydrostatic Pressure ◽  
Mass Approximation

The present work investigates the effects of the hydrostatic pressure and the external applied electric field on the binding energy for shallow donor impurities in GaAs–Ga 1 - x Al x As quantum wells. The effective mass approximation is used and a trial envelope wave function is adopted for the impurity carrier. For fixed well width and applied electric field, the binding energy of the shallow donor impurity is enhanced by increasing the external hydrostatic pressure, and for fixed well width and hydrostatic pressure, the binding energy decreases by increasing the external electric field.

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