Binding energies of helium-like impurities in parabolic quantum wells under an applied electric field

2000 ◽  
Vol 28 (3) ◽  
pp. 171-176 ◽  
Author(s):  
S.E. Okan ◽  
H. Akbas ◽  
S. Aktas ◽  
M. Tomak
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Binding Energies ◽  
Parabolic Quantum Wells

INFLUENCE OF ELECTRIC FIELD ON THE BINDING ENERGY OF HYDROGENIC IMPURITY WITH SPATIALLY DEPENDENT MASS IN NITRIDE PARABOLIC QUANTUM WELLS

2007 ◽  
Vol 21 (05) ◽  
pp. 279-286 ◽  
Author(s):  
FENG-QI ZHAO ◽  
JIAN GONG
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
Quantum Confinement Effect ◽  
Energy Levels ◽  
Binding Energies ◽  
Hydrogenic Impurity ◽  
Dependent Mass ◽  
Parabolic Quantum Wells

The ground state and binding energies of the hydrogenic impurity in a finite GaN/Al x Ga 1-x N parabolic quantum well (PQW) are investigated by using variational method. The effect of an electric field and spatial dependence effective mass (SDEM) are considered in the calculation. The results indicate that the effect of the SDEM on the energy levels is more obvious in the case of the narrower well width L. The effects decrease with increasing L, and tend to zero. The electric field shifts the energy levels towards lower energies with increasing well width L. Furthermore the ground state binding energy of the hydrogenic impurity in GaN/Al x Ga 1-x N PQWs is larger than that in GaAs/Al x Ga 1-x As PQWs. Therefore, we affirm that there is stronger quantum confinement effect in GaN/Al x Ga 1-x N PQW.

Intersubband transition in symmetric AlxGa1−xN/GaN double quantum wells with applied electric field

2008 ◽  
Vol 373 (1) ◽  
pp. 136-139 ◽  
Author(s):  
S.Y. Lei ◽  
Z.G. Dong ◽  
B. Shen ◽  
G.Y. Zhang
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Double Quantum ◽  
Intersubband Transition

scholarly journals Direct and indirect excitons in semiconductor coupled quantum wells in an applied electric field

2012 ◽  
Vol 85 (4) ◽  
Author(s):  
K. Sivalertporn ◽  
L. Mouchliadis ◽  
A. L. Ivanov ◽  
R. Philp ◽  
E. A. Muljarov
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Coupled Quantum Wells ◽  
Indirect Excitons

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

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