Relaxation time and impurity effects on linear and nonlinear refractive index changes in (In,Ga)N–GaN spherical QD

2014 ◽  
Vol 450 ◽  
pp. 21-24 ◽  
Author(s):  
Haddou El Ghazi ◽  
Anouar Jorio
Keyword(s):  
Refractive Index ◽  
Relaxation Time ◽  
Nonlinear Refractive Index ◽  
Impurity Effects ◽  
Index Changes ◽  
Linear And Nonlinear

Linear and nonlinear refractive index changes in monolayer MoSe2

2021 ◽  
Vol 10 (5) ◽  
pp. 25-30
Author(s):  
Bich Tran Ngoc ◽  
Hieu Nguyen Ngoc ◽  
Tho Ta Thi ◽  
Tu Le Thi Ngoc ◽  
Phuc Huynh Vinh
Keyword(s):  
Refractive Index ◽  
Nonlinear Refractive Index ◽  
Index Changes ◽  
Linear And Nonlinear

LINEAR AND NONLINEAR INTERSUBBAND REFRACTIVE INDEX CHANGES IN WURTZITEAlGaN/GaNDOUBLE QUANTUM WELLS: EFFECTS OF PIEZOELECTRICITY AND SPONTANEOUS POLARIZATION

2009 ◽  
Vol 16 (01) ◽  
pp. 11-17
Author(s):  
L. ZHANG
Keyword(s):  
Refractive Index ◽  
Density Matrix ◽  
Quantum Wells ◽  
Structural Parameters ◽  
Matrix Approach ◽  
Third Order ◽  
Numerical Result ◽  
Analytical Formulas ◽  
Index Changes ◽  
Linear And Nonlinear

Based on the density-matrix approach and iterative treatment, a detailed procedure for the calculation of the linear and nonlinear intersubband refractive index changes (RICs) in wurtzite GaN-based coupling quantum wells (CQWs) is given. The simple analytical formulas for electronic eigenstates and the linear and third-order nonlinear RICs in the systems are also deduced. Numerical result on a typical AlGaN / GaN CQW shows that the linear and nonlinear RICs sensitively depend on the structural parameters of the CQW system as well as the doped fraction of nitride semicondutor.

Nonlinear refractive-index changes induced by carrier injection in an InSb étalon

1991 ◽  
Vol 30 (27) ◽  
pp. 3891 ◽  
Author(s):  
David Ronaldson ◽  
Hugh A. MacKenzie ◽  
J. I. L. Hughes
Keyword(s):  
Refractive Index ◽  
Nonlinear Refractive Index ◽  
Carrier Injection ◽  
Index Changes
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