Ultrafast carrier dynamics in SnSe thin film studied by femtosecond transient absorption technique

2021 ◽  
Vol 622 ◽  
pp. 413347
Author(s):  
Shengwen Yin ◽  
Yaping Han ◽  
Tingwei Yan ◽  
Qiang Fu ◽  
Tongtong Xu ◽  
...  
2015 ◽  
Vol 84 ◽  
pp. 165-175 ◽  
Author(s):  
Yi Zhang ◽  
Xiaoming Wen ◽  
Yu Feng ◽  
Tran Smyth ◽  
Shujuan Huang ◽  
...  

2016 ◽  
Vol 18 (5) ◽  
pp. 3838-3845 ◽  
Author(s):  
Laizhi Sui ◽  
Wuwei Jin ◽  
Suyu Li ◽  
Dunli Liu ◽  
Yuanfei Jiang ◽  
...  

The carboxyl groups in C-dots greatly influence PL of C-dots as emissive surface states based on steady-state and transient absorption spectroscopy.


2005 ◽  
Vol 97 (3) ◽  
pp. 033704 ◽  
Author(s):  
Hsiang-Chen Wang ◽  
Yen-Cheng Lu ◽  
Chih-Chung Teng ◽  
Yung-Sheng Chen ◽  
C. C. Yang ◽  
...  

2021 ◽  
Author(s):  
Ya-Chao Li ◽  
Chao Ge ◽  
Peng Wang ◽  
Shuang Liu ◽  
Xiao-Ran Ma ◽  
...  

Abstract The transient dynamics of anisotropic properties of GaAs is systematically studied by polarization-dependent ultrafast time-resolved transient absorption. Our findings revealed that the anisotropy of reflectivity was enhanced in both pump-induced and probe-induced processes, suggesting an extraordinary resonance absorption of photon-phonon coupling (PPC) with intrinsic anisotropic characteristic in carrier relaxation, regardless of the concrete crystallinity and orientation of GaAs sample. The results, delivering in-depth cognition about the polarization-dependent ultrafast carrier dynamics, also proved the paramount importance of interaction between polarized laser and semiconductor.


2D Materials ◽  
2017 ◽  
Vol 4 (2) ◽  
pp. 021032 ◽  
Author(s):  
Vasudevan Iyer ◽  
Peide Ye ◽  
Xianfan Xu

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