One Order Enhancement of Charge Carrier Relaxation Rate by Tuning Structural and Optical Properties in Annealed Cobalt Doped MoS2 Nanosheets

The effective manipulation of excitons is crucial for the realization of exciton-based devices and circuits, and doping is considered a good strategy to achieve this. The influence of high temperature...

Polarization-Dependent Ultrafast Carrier Dynamics in GaAs with Anisotropic Response

The transient dynamics of anisotropic properties of GaAs is systematically studied by polarization-dependent ultrafast time-resolved transient absorption. Our findings revealed that the anisotropy of reflectivity was enhanced in both pump-induced and probe-induced processes, suggesting an extraordinary resonance absorption of photon-phonon coupling (PPC) with intrinsic anisotropic characteristic in carrier relaxation, regardless of the concrete crystallinity and orientation of GaAs sample. The results, delivering in-depth cognition about the polarization-dependent ultrafast carrier dynamics, also proved the paramount importance of interaction between polarized laser and semiconductor.

Optical information processing using dual state quantum dot lasers: complexity through simplicity

We review results on the optical injection of dual state InAs quantum dot-based semiconductor lasers. The two states in question are the so-called ground state and first excited state of the laser. This ability to lase from two different energy states is unique amongst semiconductor lasers and in combination with the high, intrinsic relaxation oscillation damping of the material and the novel, inherent cascade like carrier relaxation process, endows optically injected dual state quantum dot lasers with many unique dynamical properties. Particular attention is paid to fast state switching, antiphase excitability, novel information processing techniques and optothermally induced neuronal phenomena. We compare and contrast some of the physical properties of the system with other optically injected two state devices such as vertical cavity surface emitting lasers and ring lasers. Finally, we offer an outlook on the use of quantum dot material in photonic integrated circuits.