Piezoelectric field-dependent optical nonlinearities induced by interband transition in InGaN/GaN quantum well

2005 ◽  
Vol 27 (1-2) ◽  
pp. 221-226 ◽  
Author(s):  
Junjie Li ◽  
Liming Liu ◽  
Duanzheng Yao
Keyword(s):  
Quantum Well ◽  
Interband Transition ◽  
Optical Nonlinearities ◽  
Field Dependent ◽  
Piezoelectric Field

Transient grating studies of excitonic optical nonlinearities in GaAs/AlGaAs multiple-quantum-well structures

1989 ◽  
Vol 6 (4) ◽  
pp. 567 ◽  
Author(s):  
A. Miller ◽  
K. Woodbridge ◽  
R. J. Manning ◽  
P. K. Milsom ◽  
D. C. Hutchings ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Nonlinearities ◽  
Transient Grating ◽  
Quantum Well Structures

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

Optical nonlinearities in GaAs-GaAlAs multiple quantum-well hetero-nipi waveguides

1992 ◽  
Vol 28 (4) ◽  
pp. 864-874 ◽  
Author(s):  
C. Thirstrup ◽  
P.N. Robson ◽  
P.L.K. Wa ◽  
M.A. Pate ◽  
C.C. Button ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Nonlinearities

scholarly journals Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 295-299 ◽  
Author(s):  
D. Oriato ◽  
Alison B. Walker ◽  
W. N. Wang
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Energy Levels ◽  
Drift Diffusion Model ◽  
Light Emitting ◽  
Consistent Solution ◽  
Band Profile ◽  
Piezoelectric Field ◽  
Model Lattice ◽  
Multi Quantum Well

Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode. A self-consistent solution of Poisson and Schrödinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

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