Simulation of Widebandgap Multi-Quantum
Well Light Emitting Diodes
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Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode. A self-consistent solution of Poisson and Schrödinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.
2007 ◽
Vol 17
(01)
◽
pp. 81-84
2021 ◽
Vol 121
◽
pp. 105431
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2004 ◽
Vol 58
(21)
◽
pp. 2614-2617
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1999 ◽
Vol 176
(1)
◽
pp. 45-48
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