Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

2004 ◽  
Vol 331 (3-4) ◽  
pp. 248-251 ◽  
Author(s):  
Y.F. Mei ◽  
G.G. Siu ◽  
X.H. Huang ◽  
K.W. Cheah ◽  
Z.G. Dong ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film

Structural and optical properties of tellurite thin film glasses deposited by pulsed laser deposition

2011 ◽  
Vol 520 (1) ◽  
pp. 131-137 ◽  
Author(s):  
D. Munoz-Martin ◽  
J.M. Fernandez-Navarro ◽  
J. Gonzalo ◽  
G. Jose ◽  
A. Jha ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural And Optical Properties

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition

1996 ◽  
pp. 744-751
Author(s):  
J.F.M. Cillessen ◽  
R.M. Wolf ◽  
J.B. Giesbers ◽  
P.W.M. Blom ◽  
K.-O. Grosse-Holz ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Thin Film Devices

Microstructure of epitaxial oxide thin film heterostructures on silicon by pulsed laser deposition

1994 ◽  
Vol 64 (25) ◽  
pp. 3407-3409 ◽  
Author(s):  
Subodh G. Ghonge ◽  
Edward Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Epitaxial Oxide

Gold oxide thin film grown by pulsed laser deposition in an O2 atmosphere

2005 ◽  
Vol 472 (1-2) ◽  
pp. 49-57 ◽  
Author(s):  
Eric Irissou ◽  
Marie-Chantal Denis ◽  
Mohammed Chaker ◽  
Daniel Guay
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Gold Oxide
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