Black silicon on emitter diminishes the lateral electric field and enhances the blue response of a solar cell by optimizing depletion region uniformity

2013 ◽  
Vol 68 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Zenan Shen ◽  
Bangwu Liu ◽  
Yang Xia ◽  
Jie Liu ◽  
Jinhu Liu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Depletion Region ◽  
Black Silicon ◽  
Lateral Electric Field

Radiated Electric Field from a Solar Cell Module Set on the Ground Plane

2010 ◽  
Vol 130 (8) ◽  
pp. 724-732
Author(s):  
Ryosuke Hasegawa ◽  
Mariko Tomisawa ◽  
Masamitsu Tokuda
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Ground Plane ◽  
Cell Module ◽  
Solar Cell Module

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

Fabrication and characteristics of black silicon for solar cell applications: An overview

2014 ◽  
Vol 25 ◽  
pp. 2-17 ◽  
Author(s):  
Chih-Hung Hsu ◽  
Jia-Ren Wu ◽  
Yen-Tien Lu ◽  
Dennis J. Flood ◽  
Andrew R. Barron ◽  
...  
Keyword(s):  
Solar Cell ◽  
Black Silicon

Determination of a Microbial Cells in Their Interaction with Phage Mini-Antibodies by the Sensor Based on a PZT Resonator with a Lateral Electric Field

2021 ◽  
Vol 85 (6) ◽  
pp. 599-602
Author(s):  
I. A. Borodina ◽  
B. D. Zaitsev ◽  
A. A. Teplykh ◽  
A. K. M. Alsowaidi ◽  
O. S. Larionova ◽  
...  
Keyword(s):  
Electric Field ◽  
Microbial Cells ◽  
Lateral Electric Field

Array of piezoelectric lateral electric field excited resonators

Ultrasonics ◽  
2015 ◽  
Vol 62 ◽  
pp. 200-202 ◽  
Author(s):  
I.A. Borodina ◽  
B.D. Zaitsev ◽  
A.A. Teplykh ◽  
A.M. Shikhabudinov ◽  
I.E. Kuznetsova
Keyword(s):  
Electric Field ◽  
Lateral Electric Field
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