Interfaces Reduce Dislocation Loop Formation in Irradiated Nanolayered Zr-2.5Nb

ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

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Dislocation Loop Formation in Ion-Irradiated Polycrystalline Spinel and Alumina

Effects of Radiation on Materials: 15th International Symposium ◽

10.1520/stp17908s ◽

2009 ◽

pp. 749-749-15 ◽

Cited By ~ 6

Author(s):

SJ Zinkle

Keyword(s):

Dislocation Loop ◽

Loop Formation

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In situ TEM and multiscale study of dislocation loop formation in the vicinity of a grain boundary

Journal of Nuclear Materials ◽

10.1016/j.jnucmat.2019.151872 ◽

2020 ◽

Vol 528 ◽

pp. 151872 ◽

Cited By ~ 2

Author(s):

Qingshan Dong ◽

Peyman Saidi ◽

Laurent K. Béland ◽

Zhongwen Yao ◽

Cong Dai ◽

...

Keyword(s):

Grain Boundary ◽

Dislocation Loop ◽

In Situ Tem ◽

Loop Formation

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Cascade debris overlap mechanism of 〈100〉 dislocation loop formation in Fe and FeCr

EPL (Europhysics Letters) ◽

10.1209/0295-5075/119/56003 ◽

2017 ◽

Vol 119 (5) ◽

pp. 56003 ◽

Cited By ~ 23

Author(s):

F. Granberg ◽

J. Byggmästar ◽

A. E. Sand ◽

K. Nordlund

Keyword(s):

Dislocation Loop ◽

Loop Formation

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The Effect of a Thin Sample on the Extended Defect Evolution in Si+ Implanted Si

MRS Proceedings ◽

10.1557/proc-490-47 ◽

1997 ◽

Vol 490 ◽

Author(s):

Jing-Hong Li ◽

Kevin S. Jones

Keyword(s):

Dislocation Loop ◽

Ex Situ ◽

Dissolution Process ◽

Dislocation Loops ◽

Loop Formation ◽

Thin Sample ◽

Extended Defect ◽

Defect Evolution ◽

Annealing Study

ABSTRACTThe annealing kinetics of implant damage in Si+ implanted Si has been investigated using in-situ and ex-situ annealing of transmission electron microscopy (TEM) samples prepared prior to annealing. The defect evolution at 800°C was studied for a Si wafer implanted with Si+ at 100keV to a dose of 2×1014 cm-2. This implant was above the sub-threshold loop formation threshold allowing one to study simultaneously the {311} defect dissolution and dislocation loop nucleation and growth. In order to study the effect on the defect evolution of using a thin sample for an in-situ annealing experiment, a pair of samples, one thick and one thinned into a TEM sample, were annealed in a furnace simultaneously. It was found that the presence of a second surface 2000Å below the implant damage did not affect the extended defect evolution. For the in-situ annealing study it was found that the {311} dissolution process and sub-threshold dislocation loop formation process was not affected by the TEM electron beam at 160kV as long as an 800°C furnace pre-anneal was done prior to in-situ annealing. The dissolution rate of the {311} defects was used to confirm the TEM holder furnace temperature. The results of both the in-situ the {311} defects is released during the 311 dissolution process and 30% comes to reside in dislocation loops. Thus, the loops appear to contain a significant fraction of the total interstitial concentration introduced by the implant.

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