Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

We performed an isothermal annealing study on Mg-implanted GaN at 1300 °C in an ultra-high-pressure (1 GPa) nitrogen ambient. Annealing for more than 30 min resulted in a high acceptor activation ratio and a low compensation ratio that were comparable to those obtained with annealing at 1400 °C for 5 min. We also performed annealing at 1300 °C in a reduced nitrogen pressure of 300 MPa which makes us possible to expand inner diameter of annealing equipment in the future. High electrical activation, similar to one obtained by annealing at 1 GPa, was successfully obtained.

Effect of β Phase Decomposition on Recrystallization in α-Zr Region in Zr-2.5%Nb Pressure Tube Material

The effects of β phase decomposition on recrystallization and texture variation in Zr-2.5% Nb alloy pressure tube material were investigated. Isothermal annealing was conducted at 350 to 550 ^oC for 240 hours, and isothermal annealing was performed at 500 ^oC for 240 to 3,000 hours. The recrystallization and texture variation were analyzed by inverse pole figure variation using the XRD and EBSD methods. Annealing in α-Zr region at below 610 ^oC induced recrystallization and texture variation in the α-Zr. These results differ from those from a previous annealing study of the α+β region at 750-830 ^oC. Annealing above 400 ^oC for 240 hours caused β-Zr decomposition into β-Nb. The decomposition of the β-phase by annealing above 475 ^oC caused a contraction of 7.5% in the d(110) spacing in the β-phase, and a reduction in the volume fraction of the β phase by about 80%. It seems that the stress internally formed by the lattice contraction of the β-phase provides the driving force for recrystallization. In addition, it suggests that the newly formed α-Zr produced by β phase decomposition provides new nucleation sites for recrystallization and causes texture variation in the α-Zr. The reason why the recrystallization and the texture variation occurs only in the α-Zr stable region at below 610 ^oC is discussed.

Sub-gap defect density characterization of molybdenum oxide: An annealing study for solar cell applications

The application of molybdenum oxide in the photovoltaic field is gaining traction as this material can be deployed in doping-free heterojunction solar cells in the role of hole selective contact. For modeling-based optimization of such contact, knowledge of the molybdenum oxide defect density of states (DOS) is crucial. In this paper, we report a method to extract the defect density through nondestructive optical measures, including the contribution given by small polaron optical transitions. The presence of defects related to oxygen-vacancy and of polaron is supported by the results of our opto-electrical characterizations along with the evaluation of previous observations. As part of the study, molybdenum oxide samples have been evaluated after post-deposition thermal treatments. Quantitative results are in agreement with the result of density functional theory showing the presence of a defect band fixed at 1.1 eV below the conduction band edge of the oxide. Moreover, the distribution of defects is affected by post-deposition treatment.