scholarly journals Selection of aptamers to Neisseria meningitidis and Streptococcus pneumoniae surface specific proteins and affinity assay using thin film AlN resonators

2017 ◽  
Vol 246 ◽  
pp. 591-596 ◽  
Author(s):  
José M. Escolano ◽  
Bárbara Díaz-Durán ◽  
Mario DeMiguel-Ramos ◽  
Jimena Olivares ◽  
Morten A. Geday ◽  
...  
1998 ◽  
Vol 26 (149) ◽  
pp. 34 ◽  
Author(s):  
Mª Amparo Morant Gimeno ◽  
J. Díez Domingo ◽  
C. Gimeno ◽  
N. de la Muela ◽  
I. Pereiró ◽  
...  

2002 ◽  
Vol 46 (12) ◽  
pp. 3744-3749 ◽  
Author(s):  
Satoshi Ameyama ◽  
Shoichi Onodera ◽  
Masahiro Takahata ◽  
Shinzaburo Minami ◽  
Nobuko Maki ◽  
...  

ABSTRACT Neisseria gonorrhoeae strains with reduced susceptibility to cefixime (MICs, 0.25 to 0.5 μg/ml) were isolated from male urethritis patients in Tokyo, Japan, in 2000 and 2001. The resistance to cephems including cefixime and penicillin was transferred to a susceptible recipient, N. gonorrhoeae ATCC 19424, by transformation of the penicillin-binding protein 2 gene (penA) that had been amplified by PCR from a strain with reduced susceptibility to cefixime (MIC, 0.5 μg/ml). The sequences of penA in the strains with reduced susceptibilities to cefixime were different from those of other susceptible isolates and did not correspond to the reported N. gonorrhoeae penA gene sequences. Some regions in the transpeptidase-encoding domain in this penA gene were similar to those in the penA genes of Neisseria perflava (N. sicca), Neisseria cinerea, Neisseria flavescens, and Neisseria meningitidis. These results showed that a mosaic-like structure in the penA gene conferred reductions in the levels of susceptibility of N. gonorrhoeae to cephems and penicillin in a manner similar to that found for N. meningitidis and Streptococcus pneumoniae.


2001 ◽  
Vol 670 ◽  
Author(s):  
Ran Liu ◽  
Stefan Zollner ◽  
Peter Fejes ◽  
Rich Gregory ◽  
Shifeng Lu ◽  
...  

ABSTRACTRapid shrinking in device dimensions calls for replacement of SiO2 by new gate insulators in future generations of MOSFETs. Among many desirable properties, potential candidates must have a higher dielectric constant, low leakage current, and thermal stability against reaction or diffusion to ensure sharp interfaces with both the substrate Si and the gate metal (or poly-Si). Extensive characterization of such materials in thin-film form is crucial not only for selection of the alternative gate dielectrics and processes, but also for development of appropriate metrology of the high-k films on Si. This paper will report recent results on structural and compositional properties of thin film SrTiO3 and transition metal oxides (ZrO2and HfO2).


2019 ◽  
Vol 3 (11) ◽  
pp. 519-530 ◽  
Author(s):  
Lisa A. Lewis ◽  
Sandip Panicker ◽  
Rosane B. DeOliveira ◽  
Graham C. Parry ◽  
Sanjay Ram

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