Loss mechanisms in CZTS and CZTSe Kesterite thin-film solar cells: Understanding the complexity of defect density

The substitution of Ge4+ for Sn4+ in Cu2ZnSn(S,Se)4 (CZTSSe) kesterite-type absorber layers for thin film solar cells has been proven to enhance the opto-electronic properties of the material.

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Variation in Absorber Layer Defect Density in Amorphous and Microcrystalline Silicon Thin Film Solar Cells with 2 MeV Electron Bombardment

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.022301 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 022301 ◽

Cited By ~ 6

Author(s):

Vladimir Smirnov ◽

Oleksandr Astakhov ◽

Reinhard Carius ◽

Yuri Petrusenko ◽

Valeriy Borysenko ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Defect Density ◽

Electron Bombardment ◽

Absorber Layer ◽

Thin Film Solar Cells ◽

Microcrystalline Silicon ◽

Silicon Thin Film ◽

Layer Defect

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Performance potential of low-defect density silicon thin-film solar cells obtained by electron beam evaporation and laser crystallisation

EPJ Photovoltaics ◽

10.1051/epjpv/2012012 ◽

2013 ◽

Vol 4 ◽

pp. 40301 ◽

Cited By ~ 13

Author(s):

J. Dore ◽

S. Varlamov ◽

R. Evans ◽

B. Eggleston ◽

D. Ong ◽

...

Keyword(s):

Thin Film ◽

Electron Beam ◽

Solar Cells ◽

Defect Density ◽

Electron Beam Evaporation ◽

Thin Film Solar Cells ◽

Performance Potential ◽

Silicon Thin Film

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Identifying and comparing efficiency-loss mechanisms in earth-abundant thin-film solar cells

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc.2013.6744277 ◽

2013 ◽

Cited By ~ 1

Author(s):

Riley E. Brandt ◽

Michael Lloyd ◽

Yun S. Lee ◽

Sin Cheng Siah ◽

Tonio Buonassisi

Keyword(s):

Thin Film ◽

Solar Cells ◽

Thin Film Solar Cells ◽

Efficiency Loss ◽

Earth Abundant ◽

Loss Mechanisms

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Material and growth mechanism studies of microcrystalline silicon deposited from SiF4/H2/Ar gas mixtures

Canadian Journal of Physics ◽

10.1139/cjp-2013-0606 ◽

2014 ◽

Vol 92 (7/8) ◽

pp. 740-743 ◽

Cited By ~ 8

Author(s):

Jean-Christophe Dornstetter ◽

Junkang Wang ◽

Bastien Bruneau ◽

Erik V. Johnson ◽

Pere Roca i Cabarrocas

Keyword(s):

Thin Film ◽

Solar Cells ◽

Defect Density ◽

Gas Mixtures ◽

Thin Film Solar Cells ◽

Microcrystalline Silicon ◽

Crystalline Fraction ◽

Photocurrent Spectroscopy ◽

Ar Gas

Hydrogenated microcrystalline silicon is of great interest as the intrinsic layer in thin film solar cells. It is generally accepted that optimized cells use an I-layer with a crystalline fraction ranging from 50% to 70%. We report here on the use of fully crystallized layers deposited from SiF4/H2/Ar gas mixtures. A VOC of 536 mV and a JSC of 25.4 mA/cm2 have been obtained in PIN solar cells using a fully crystallized intrinsic material. Fourier transform photocurrent spectroscopy measurements show that the films have a very low defect density down to 5.1 × 1014 cm−3. The role of H2 during deposition has been investigated: it is demonstrated that H2 is needed to remove F by forming HF molecules. When all atomic F has been removed from the plasma, the remaining atomic H can then contribute to μc-Si:H growth.

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