A Review of Observations of Molecular Ions in the Earth’s Magnetosphere-Ionosphere System

Ionospheric molecular ions, such as NO+, N2+ and O2+, are gravitationally bound, and are expected to undergo recombination to form a pair of neutral atoms, due to short dissociative recombination lifetime. Therefore, they are expected to be relatively cold in the Earth’s atmosphere, compared with light ions such as H+ and He+, or even heavier ions such as N+ or O+. However, several spacecraft missions observed their presence in the high-altitude ionosphere and the magnetosphere, predominantly during the geomagnetically active times. This hints to the possibility that molecular ions have the ability to acquire sufficient energy in a very short time, and can be used as tracers of mass differentiated vertical transport to understand the mechanisms responsible for “fast ionospheric outflow” and, In this letter, we review the observational data sets that reported on the abundances of molecular ions in the Earth’s magnetosphere-ionosphere system, starting from their first observations by the Sputnik III mission, to the current Arase (ERG) satellite and Enhanced Polar Outflow Probe (e-POP) missions. The available data suggests that molecular ions are quite abundant in the lower atmosphere at all times, but are only seen in the high-altitude ionosphere and magnetosphere during the times of increased geomagnetic activity.

Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Micro-light emitting diodes (Micro-LEDs) based on III-nitride semiconductors have become a research hotspot in the field of high-resolution display due to its unique advantages. However, the edge effect caused by inductively coupled plasma (ICP) dry etching in Micro-LEDs become significant with respect to the decreased chip size, resulting in a great reduction in device performance. In this article, sector-shaped GaN-based blue Micro-LEDs are designed and fabricated. Additionally, the device performance of different size Micro-LEDs with passivation are investigated with respect to those without passivation. Several methods have been applied to minimize the etching damage near the edge, including acid-base wet etching and SiO2 passivation layer growth. The room temperature photoluminescence (PL) results demonstrate that the light emission intensity of Micro-LEDs can be significantly enhanced by optimized passivation process. PL mapping images show that the overall luminescence of properly passivated Micro-LEDs is enhanced, the uniformity is improved, and the effective luminescence area is increased. The recombination lifetime of carriers in Micro-LEDs are increased by the usage of passivation process, which proves the reduction in non-radiative recombination centers in Micro-LEDs and improved luminescence efficiency. As a result, the internal quantum efficiency (IQE) is improved from 14.9% to 37.6% for 10 μm Micro-LEDs, and from 18.3% to 26.9% for 5 μm Micro-LEDs.

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.

Excitation Wavelength and Intensity-Dependent Multiexciton Dynamics in CsPbBr3 Nanocrystals

CsPbBr3 has attracted great attention due to unique optical properties. The understanding of the multiexciton process is crucial for improving the performance of the photoelectric devices based on CsPbBr3 nanocrystals. In this paper, the ultrafast dynamics of CsPbBr3 nanocrystals is investigated by using femtosecond transient absorption spectroscopy. It is found that Auger recombination lifetime increases with the decrease of the excitation intensity, while the trend is opposite for the hot-exciton cooling time. The time of the hot-carriers cooling to the band edge is increased when the excitation energy is increased from 2.82 eV (440 nm) to 3.82 eV (325 nm). The lifetime of the Auger recombination reaches the value of 126 ps with the excitation wavelength of 440 nm. The recombination lifetime of the single exciton is about 7 ns in CsPbBr3 nanocrystals determined by nanosecond time-resolved photoluminescence spectroscopy. The exciton binding energy is 44 meV for CsPbBr3 nanocrystals measured by the temperature-dependent steady-state photoluminescence spectroscopy. These findings provide a favorable insight into applications such as solar cells and light-emitting devices based on CsPbBr3 nanocrystals.

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si1−xGex structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n+p structure.

CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES

Surface recombination strongly influence on the photoconductivity decay curve. In this work it was shown that usually defined using this curve the effective life time don’t achieve maxima value if silicon sample thickness exceeds six diffusion length. In this case well known formulas for calculation of free carrier recombination lifetime need to be adjusted.