Etching of ZnO films by a focused flow electrons with medium energies (up to 70 keV)

Consideration is given to the results of the study of etching processes ( 200 nm/min) of a ZnO film by a focused electron beam with medium energy (70 keV) under vacuum conditions of 910-5 Pa. It was shown that the construction of a model of the ZnO film etching during electron bombardment, taking into account the likely thermal desorption and electron-stimulated desorption, is not confirmed by calculations. A possible etching mechanism based on the radiolysis caused by Auger decay in near-surface layers of ZnO films is proposed.

Interface induced diffusion

Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al2O3 layer. The defects produced partially relaxed. The rate of relaxation is, however, was different in the vicinity of the interface and in the "bulk" parts of the Al2O3 layer. This difference creates an oxygen concentration gradient and consequently oxygen diffusion, resulting in an altered layer which grows from the Al2O3/Si substrate interface. The relative rate of the diffusion and relaxation is strongly temperature dependent, resulting in various altered layer compositions, SiO2 (at room temperature), Al2O3 + AlOx + Si (at 500 °C), Al2O3 + Si (at 700 °C), as the temperature during irradiation varies. Utilizing this finding it is possible to produce area selective interface patterning.

Interface Induced Diffusion; Area Selective Interface Patterning

Interface induced diffusion had been identified in thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick) / Si substrate system, which was subjected to low energy (5 keV) electron bombardment producing defects in the Al2O3 layer. The defects produced partially relaxed. The rate of relaxation is, however, different in the surrounding of the interface and in the "bulk" parts of the Al2O3 layer. This difference generates an oxygen concentration gradient and consequently oxygen diffusion, resulting in an altered layer which grows from the Al2O3 / Si substrate interface. The relative rate of the diffusion and relaxation is strongly temperature dependent, resulting in various altered layer compositions, SiO2 (at room temperature), Al2O3 + AlOx+Si (at 500o C), Si(at 700o C), as the temperature during irradiation varies. Utilizing this finding it is possible to make area selective interface patterning.