The structure and photocatalytic studies of N-doped TiO2 films prepared by radio frequency reactive magnetron sputtering

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.

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Yttrium-doped TiO2 films prepared by means of DC reactive magnetron sputtering

Chemical Engineering Journal ◽

10.1016/j.cej.2009.06.039 ◽

2009 ◽

Vol 155 (1-2) ◽

pp. 83-87 ◽

Cited By ~ 40

Author(s):

Wenjie Zhang ◽

Kuanling Wang ◽

Shenglong Zhu ◽

Ying Li ◽

Fuhui Wang ◽

...

Keyword(s):

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

Tio2 Films ◽

Reactive Magnetron ◽

Doped Tio2 ◽

Dc Reactive Magnetron Sputtering

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Effect of post annealing on properties of N-doped TiO2 films deposited by reactive magnetron sputtering

Journal of Physics Conference Series ◽

10.1088/1742-6596/1281/1/012083 ◽

2019 ◽

Vol 1281 ◽

pp. 012083

Author(s):

Zhilei Sun ◽

K E Evdokimov ◽

M E Konishchev ◽

O S Kuzmin ◽

V F Pichugin

Keyword(s):

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

Tio2 Films ◽

Reactive Magnetron ◽

Doped Tio2 ◽

Post Annealing

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Reactive magnetron sputtering of Nb-doped TiO2 films: Relationships between structure, composition and electrical properties

Thin Solid Films ◽

10.1016/j.tsf.2015.11.058 ◽

2016 ◽

Vol 605 ◽

pp. 44-52 ◽

Cited By ~ 39

Author(s):

Stefan Seeger ◽

Klaus Ellmer ◽

Michael Weise ◽

Daniela Gogova ◽

Daniel Abou-Ras ◽

...

Keyword(s):

Electrical Properties ◽

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

Tio2 Films ◽

Reactive Magnetron ◽

Doped Tio2

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INVESTIGATIONS OF TiO2 FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING

Acta Physica Sinica ◽

10.7498/aps.50.1390 ◽

2001 ◽

Vol 50 (7) ◽

pp. 1390

Author(s):

ZHAO KUN ◽

ZHU FENG ◽

WANG LI-FANG ◽

MENG TIE-JUN ◽

ZHANG BAO-CHENG ◽

...

Keyword(s):

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

Tio2 Films ◽

Reactive Magnetron

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Deposition and properties of ZrNx films produced by radio frequency reactive magnetron sputtering

Thin Solid Films ◽

10.1016/j.tsf.2006.04.012 ◽

2006 ◽

Vol 515 (4) ◽

pp. 1486-1493 ◽

Cited By ~ 23

Author(s):

A. Rizzo ◽

M. A. Signore ◽

L. Mirenghi ◽

D. Dimaio

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron

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Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.999 ◽

2007 ◽

Vol 124-126 ◽

pp. 999-1002 ◽

Cited By ~ 4

Author(s):

Han Na Cho ◽

Jang Woo Lee ◽

Su Ryun Min ◽

Chee Won Chung

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Visible Region ◽

Film Surface ◽

Optical Transmittance ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Indium Zinc Oxide

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.

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