ABSTRACTKOH, an anisotropic etchant of monocrystalline Si, may cause roughness and defects whose shapes are related to crystallographic orientations. This paper studies the effect of processing steps on the formation of geometric etch defects. Implantation, thermal treatment, epitaxial growth or photoresist were not the source of such defects. In the scope of this study, only unwanted damage caused geometric etch defects. This makes the observation of the wafer after KOH etch a good indicator of the quality of previous steps.
This paper considers a structure, named a ‘random partition process’, which is a generalisation of a random tessellation. The cells, possibly multi-part and with holes, have a general topology summarised by the Euler characteristic. Vertices of all orders are allowed. Using the tools of ergodic theory, all of the formulae, from the traditional theory of random tessellations with convex cells, are generalised. Some motivating examples are given.
ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.
We have measured the differential current-voltage characteristics of normal metal-NbSe3 direct
point contacts (without insulating barrier) formed along different crystallographic orientations under applied
magnetic field with different orientations. At low temperature two energy gaps, $\Delta_{p1}$ and $\Delta_{p2}$, corresponding
to the high and the low-temperature CDW were observed simultaneously as a singulanty of the excess
resistance which is attributed to an analog of Andreev reflection, in which the incident electron reflects on
the Peierls energy gap barriers with its charge unchanged. An applied magnetic field up to 8.5 T does not lead
to a change in the density of states and in the Peierls energy gaps, suggesting that the large magnetoresistance
observed in NbSe3 might not result from the change in the CDW order parameter with magnetic field but
rather from the increase of scattering of non-condensed to CDW carriers.
Long-Term Corrosion Behavior of AZ80 Magnesium Alloy along Different Crystallographic Orientations in Simulated Body Fluid
