Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Growth of LiNbO3 films on single crystal sapphire substrates using pulsed laser deposition

1999 ◽  
Vol 25 (1-4) ◽  
pp. 91-102
Author(s):  
Y. Gim ◽  
K. T. Gahagan ◽  
C. Kwon ◽  
M. Hawley ◽  
V. Gopalan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sapphire Substrates ◽  
Single Crystal Sapphire

Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

1995 ◽  
Vol 410 ◽  
Author(s):  
J. E. Cosgrove ◽  
P. A. Rosenthal ◽  
D. Hamblen ◽  
D. B. Fenner ◽  
C. Yang
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Auger Microprobe ◽  
Substrate Types

ABSTRACTWe have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

Pulsed Laser Deposition of VO 2 Single Crystal Thin Films on Sapphire Substrates

1998 ◽  
Vol 15 (12) ◽  
pp. 904-906 ◽  
Author(s):  
Pei-ran Zhu ◽  
S Yamamoto ◽  
A Miyashita ◽  
H Naramoto
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sapphire Substrates

Pulsed Laser Deposition of ZnO Thin Films for Piezoelectric Applications

1994 ◽  
Vol 360 ◽  
Author(s):  
E.P. Donovan ◽  
J.S. Horwitz ◽  
C.A. Carosella ◽  
R.C.Y. Auyeung ◽  
D.B. Chrisey ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Zno Films ◽  
Infrared Transmission ◽  
X Ray ◽  
Fused Quartz

AbstractTransparent, insulating ZnO thin films have been deposited in-situ by pulsed laser deposition (PLD) from sintered targets. Films were deposited on substrates of fused quartz, <0001> A12O3, polycrystalline and textured (111) Au, at several substrate deposition temperatures (TSubstrate ≤ 700° C) and background oxygen pressures (P ≤ 300 mTorr). Film structure, morphology and electrical properties were characterized by X-ray diffraction, Rutherford backscattering spectrometry, optical properties were characterized by infrared transmission and reflection, and electrical resistivity was measured normal to the films. Films were crystalline, phase pure, and c-axis oriented. ZnO films deposited onto fused quartz and <0001> sapphire showed x-ray rocking curve full width at half maxima of 5° and 0.34°, respectively. The structure of ZnO films deposited on (111) textured Au was sensitive to the degree of texturing in the Au. The resistivity of PLD ZnO films was 61-63 kΩcm which was a factor of three improvement over sputter deposited films. Deposition of Au by both PLD and IBAD showed a negative correlation between the crystalline texturing and film adherence.

The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δepitaxial films

RSC Advances ◽  
2014 ◽  
Vol 4 (98) ◽  
pp. 55082-55086 ◽  
Author(s):  
Haoliang Huang ◽  
Zhenlin Luo ◽  
Yuanjun Yang ◽  
Mengmeng Yang ◽  
Haibo Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Strain State ◽  
Pulsed Laser ◽  
Epitaxial Films ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Ultrathin Sm0.6Nd0.4NiO3−δepitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO3(LAO) single crystal substrates. TheTMIof the SNNO films remarkably decreases with the decrease of the growth oxygen pressure, while the strain state varied slightly.

(Mg,Zn)O/ZnO Heterostructures Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 388 ◽  
pp. 3-6 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Isao Sakaguchi ◽  
Takeo Osawa ◽  
Haruki Ryoken ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Band Spectra ◽  
Domain Inversion ◽  
Surface Morphologies ◽  
Zno Single Crystal

(Mg,Zn)O films were grown on Zn- and O-face ZnO single crystal substrates by pulsed laser deposition. The surface morphologies of the films grown on the Zn- and O-face substrates were quite different, indicating that no domain inversion occurred in both films. The films showed markedly different features for valence band spectra obtained by hard X-ray photoemission spectroscopy. This suggests that the effect of film polarity should be considered in X-ray photoemission spectroscopy.

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