KOH-ETCH Related Defects on Processed Silicon Wafers

1992 ◽  
Vol 259 ◽  
Author(s):  
Laurent E. Kassel
Keyword(s):  
Thermal Treatment ◽  
Epitaxial Growth ◽  
Silicon Wafers ◽  
Processing Steps ◽  
Crystallographic Orientations

ABSTRACTKOH, an anisotropic etchant of monocrystalline Si, may cause roughness and defects whose shapes are related to crystallographic orientations. This paper studies the effect of processing steps on the formation of geometric etch defects. Implantation, thermal treatment, epitaxial growth or photoresist were not the source of such defects. In the scope of this study, only unwanted damage caused geometric etch defects. This makes the observation of the wafer after KOH etch a good indicator of the quality of previous steps.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Effects of taping on grinding quality of silicon wafers in backgrinding

2021 ◽  
Author(s):  
Zhigang Dong ◽  
Qian Zhang ◽  
Haijun Liu ◽  
Renke Kang ◽  
Shang Gao
Keyword(s):  
Silicon Wafers

(Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers

2013 ◽  
Vol 50 (9) ◽  
pp. 613-621 ◽  
Author(s):  
G. Kozlowski ◽  
O. Fursenko ◽  
P. Zaumseil ◽  
T. Schroeder ◽  
M. Vorderwestner ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silicon Wafers ◽  
Buffer Layers ◽  
New Materials

Combinatory Effect of Thermal Treatment and Blending on the Quality of Pomegranate Juices

2012 ◽  
Vol 6 (11) ◽  
pp. 3186-3199 ◽  
Author(s):  
Pedro Mena ◽  
Nuria Martí ◽  
Domingo Saura ◽  
Manuel Valero ◽  
Cristina García-Viguera
Keyword(s):  
Thermal Treatment

Pts-Oi Complex Formation in Platinum Diffused Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Wilfried Vervisch ◽  
Laurent Ventura ◽  
Bernard Pichaud ◽  
Gérard Ducreux ◽  
André Lhorte
Keyword(s):  
Thermal Treatment ◽  
Complex Formation ◽  
Cooling Rate ◽  
Point Defects ◽  
Diffusion Processes ◽  
Silicon Wafers ◽  
Doping Behaviour ◽  
Simulation Results ◽  
Dopant Atoms ◽  
P Type

AbstractWhen platinum is diffused at temperatures higher than 900°C in Cz or FZ low doped n-type silicon samples, which are then cooled slowly in the range [1-10]°C/min, a p-type doping leading to the formation of a pn junction can be observed by spreading resistance measurement. The lower the cooling rate, the deeper the junction is. This junction disappears after a second thermal treatment finishing with a quenching step. A platinum related complex formation is considered to explain this reversible doping behaviour. Different possible interactions between platinum and other impurities such as dopant atoms, intrinsic point defects, and common residual impurities (C, Oi, transition metallic atoms) are studied here. Experimental results from Pt diffusion processes in different qualities of silicon wafers, and simulation results, lead to the conclusion that the platinum related p-type doping effect is due to the formation of a Pts-Oi complex.

scholarly journals Epitaxial growth by monolayer restricted galvanic displacement

2012 ◽  
Vol 77 (9) ◽  
pp. 1239-1242
Author(s):  
Rastko Vasilic
Keyword(s):  
Epitaxial Growth ◽  
Deposition Process ◽  
Scanning Tunneling ◽  
Deposit Morphology ◽  
Galvanic Displacement ◽  
Tunneling Microscopy ◽  
Efficient Tool ◽  
Dimensional Growth ◽  
Key Parameter

The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD) was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV) and scanning tunneling microscopy (STM) are employed to carry out and monitor a ?quasi-perfect?, two-dimensional growth of Ag on Au(111), Cu on Ag(111), and Cu on Au(111) by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

scholarly journals A study on processing conditions of fermented acerola juice

2018 ◽  
Vol 17 (05) ◽  
pp. 123-136
Author(s):  
Thanh T. Le
Keyword(s):  
Vitamin C ◽  
Sugar Concentration ◽  
Enzyme Treatment ◽  
Fermented Product ◽  
Sensory Score ◽  
Commercial Yeast ◽  
Processing Steps ◽  
Fermented Juice ◽  
Microbiological Properties

This study investigated some key processing steps of fermented acerola juice, including variety, maturity, enzyme treatment, sugar concentration and fermentation and pasteurization conditions. One or two-factor experiments were randomly designed to determine the most suitable processing variables based on the investigated parameters, including the content of vitamin C, sensory quality and physicochemical properties of the resultant juice. The results showed that the Brazil variety (Malpiphia emarginata D.C) had highest vitamin C content (1567.9 mg/100 g), followed by sour variety (Malpiphia glabra L.) (882.9 mg/100 g) and sweet variety (Malpiphia punicifolia L.) (630.4 mg/100 g). However, according to sensory evaluation results, the sour acerola juice after fermentation had the highest overall score, indicating to be the most suitable for processing. The fermented juice of sour acerola variety at 100% maturity had the highest sensory score and vitamin C content compared to other levels of maturity. In order to enhance the clarity of acerola juice, the addition of 0.15% pectinase enzyme (Pectinex ultra SPL, Novozymes) was the most effective compared to 0.05 and 0.1% (w/w) enzyme concentrations. The fermentation at 15oC in 48 hours with 22% sugar concentration and 0.1% commercial yeast (Saf-instant, France) obtained the highest quality fermented juice. The fermented product was pasteurized at 80oC for 10 minutes to stop fermentation process as well as to retain the color and taste of the fermented juice. The good quality of the fermented acerola juice, in terms of physicochemical, sensory and microbiological properties could be maintained for at least 6 months.

scholarly journals Problems of Analyzing Microstructure Images in Assessing the Impact of Technological Parameters of Combined Strain Wave Hardening on the Quality of the Surface Layer

2019 ◽  
Author(s):  
Андрей Киричек ◽  
Andrey Kirichek ◽  
Дмитрий Соловьев ◽  
Dmitriy Solovyev ◽  
Александр Хандожко ◽  
...  
Keyword(s):  
Surface Layer ◽  
Thermal Treatment ◽  
Strain Wave ◽  
Technological Parameters ◽  
Steel Microstructure ◽  
Main Indicator ◽  
Metallographic Images ◽  
Surface Layer Quality ◽  
The Impact

The problems of analyzing metallographic images and the method of their solution using modern software for the analysis of metallographic images are described. There is given an analysis of microstructure images as the main indicator of the surface layer quality by the example of studying the research results of strain wave hardening combinations and chemical-thermal treatment, in particular the influence of previous strain wave hardening and subsequent thermal and chemical- thermal treatment on the alloy steel microstructure or previous thermal and chemical- thermal treatment and subsequent strain wave hardening. On the basis of the analysis the effectiveness of strain wave hardening and chemical and thermal treatment is established.

scholarly journals Impact of Processing Factors on Quality of Frozen Vegetables and Fruits

2020 ◽  
Vol 12 (4) ◽  
pp. 399-420 ◽  
Author(s):  
R. G. M. van der Sman
Keyword(s):  
Mechanical Damage ◽  
Process Intensification ◽  
Processing Technology ◽  
Production Chain ◽  
Processing Technologies ◽  
Biochemical Processes ◽  
Novel Processing ◽  
Vegetables And Fruits ◽  
Processing Steps

Abstract In this paper I review the production of frozen vegetables and fruits from a chain perspective. I argue that the final quality of the frozen product still can be improved via (a) optimization of the complete existing production chain towards quality, and/or (b) introduction of some promising novel processing technology. For this optimization, knowledge is required how all processing steps impact the final quality. Hence, first I review physicochemical and biochemical processes underlying the final quality, such as water holding capacity, ice crystal growth and mechanical damage. Subsequently, I review how each individual processing step impacts the final quality via these fundamental physicochemical and biochemical processes. In this review of processing steps, I also review the potential of novel processing technologies. The results of our literature review are summarized via a causal network, linking processing steps, fundamental physicochemical and biochemical processes, and their correlation with final product quality. I conclude that there is room for optimization of the current production chains via matching processing times with time scales of the fundamental physicochemical and biochemical processes. Regarding novel processing technology, it is concluded in general that they are difficult to implement in the context of existing production chains. I do see the potential for novel processing technology combined with process intensification, incorporating the blanching pretreatment—but which involves quite a change of the production chain.

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