Electrical transport properties of Fe3−xMgxO4 ferrite films on MgO (001) and SrTiO3 (001) grown by molecular beam epitaxy

2008 ◽  
Vol 148 (7-8) ◽  
pp. 353-356 ◽  
Author(s):  
D.S. Lee ◽  
G. Chern
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Electrical Transport Properties ◽  
Ferrite Films

Investigation on the electrical transport properties of highly (00l)-textured Sb2Te3 films deposited by molecular beam epitaxy

2014 ◽  
Vol 115 (2) ◽  
pp. 024307 ◽  
Author(s):  
Xiangpeng Zhang ◽  
Zhigang Zeng ◽  
Chao Shen ◽  
Ziqiang Zhang ◽  
Zhichong Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Electrical Transport Properties

Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1704-1708 ◽  
Author(s):  
G. Y. Zhao ◽  
Hiroshi Ebisu ◽  
Tetsuo Soga ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Electrical Transport Properties

Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy

2008 ◽  
Vol 103 (6) ◽  
pp. 066107 ◽  
Author(s):  
Young S. Park ◽  
Chang M. Park ◽  
J. W. Lee ◽  
H. Y. Cho ◽  
T. W. Kang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Electrical Transport Properties

Anomalous electrical transport properties of Ag/Al bilayers grown on Si by molecular beam epitaxy

2007 ◽  
Vol 142 (4) ◽  
pp. 200-205 ◽  
Author(s):  
A.K. Debnath ◽  
Niraj Joshi ◽  
D.K. Aswal ◽  
S.K. Deshpande ◽  
S.K. Gupta ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Electrical Transport Properties

Transport Properties in All Oxide Magnetic Multilayers

2008 ◽  
Vol 587-588 ◽  
pp. 318-322
Author(s):  
H. Sobreiro ◽  
B. Berini ◽  
N. Keller ◽  
David S. Schmool
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Magnetic Layer ◽  
Magnetic Multilayers ◽  
Magnetic Multilayer ◽  
Electrical Transport Properties ◽  
Appreciable Increase ◽  
Magnetic Layers ◽  
Laser Mbe

The all oxide magnetic multilayer system [LaNiO3/SmFeO3]n (for n = 1 and 2), grown on single crystal SrTiO3(100) substrates, has been produced using the laser MBE (Molecular Beam Epitaxy) technique. We have made a systematic study of the electrical transport properties in the temperature range from 15–300K. As part of this work, we have made a detailed study of the metallic properties of the LaNiO3 layer as a function of the oxygen partial pressure (pO2) and substrate temperature (TS). We have measured magnetic layers of SmFeO3 with LaNiO3 electrodes as a function of the magnetic layer thickness (10 – 470 nm). A non-metallic behaviour is observed with evidence of a “hopping” mechanism at low temperatures. For the n = 2 multilayers, we have measured the temperature dependence of resistance for the sample series with varying LaNiO3 interlayer thickness (t = 2 – 30 nm). We observe an appreciable increase of the low temperature resistance for the interlayer thicknesses between 3.75 – 7.5 nm. This could indicate a change in coupling from ferromagnetic to antiferromagnetic between the magnetic layers.

Electrical transport properties of cerium doped Bi2Te3 thin films grown by molecular beam epitaxy

2021 ◽  
Vol 42 (12) ◽  
pp. 122902
Author(s):  
Peng Teng ◽  
Tong Zhou ◽  
Yonghuan Wang ◽  
Ke Zhao ◽  
Xiegang Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Electrical Transport ◽  
Kondo Effect ◽  
Molecular Beam ◽  
Magnetic Moments ◽  
Surface States ◽  
Electrical Transport Properties ◽  
Doping Effects ◽  
Topological Surface

Abstract Introducing magnetism into topological insulators (TIs) can tune the topological surface states and produce exotic physical effects. Rare earth elements are considered as important dopant candidates, due to their large magnetic moments from heavily shielded 4f electrons. As the first element with just one 4f electron, cerium (Ce) offers an ideal platform for exploring the doping effect of f-electron in TIs. Here in this work, we have grown cerium-doped topological insulator Bi2Te3 thin films on an Al2O3(0001) substrate by molecular beam epitaxy (MBE). Electronic transport measurements revealed the Kondo effect, weak anti-localization (WAL) effect and suppression of surface conducting channels by Ce doping. Our research shows the fundamental doping effects of Ce in Bi2Te3 thin films, and demonstrates that such a system could be a good platform for further research.

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