Electrical transport properties of cerium doped Bi2Te3 thin films grown by molecular beam epitaxy

Abstract Introducing magnetism into topological insulators (TIs) can tune the topological surface states and produce exotic physical effects. Rare earth elements are considered as important dopant candidates, due to their large magnetic moments from heavily shielded 4f electrons. As the first element with just one 4f electron, cerium (Ce) offers an ideal platform for exploring the doping effect of f-electron in TIs. Here in this work, we have grown cerium-doped topological insulator Bi2Te3 thin films on an Al2O3(0001) substrate by molecular beam epitaxy (MBE). Electronic transport measurements revealed the Kondo effect, weak anti-localization (WAL) effect and suppression of surface conducting channels by Ce doping. Our research shows the fundamental doping effects of Ce in Bi2Te3 thin films, and demonstrates that such a system could be a good platform for further research.

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Electrical transport properties and Kondo effect in La1−xPrxNiO3−δ thin films

Scientific Reports ◽

10.1038/s41598-021-84736-2 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Van Hien-Hoang ◽

Nak-Kwan Chung ◽

Heon-Jung Kim

Keyword(s):

Thin Films ◽

Electrical Transport ◽

Kondo Effect ◽

Magnetic Moments ◽

Structural Disorder ◽

Strongly Correlated ◽

Electrical Transport Properties ◽

Strongly Correlated Electron ◽

Correlated Electron Systems ◽

Correlated Electron

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

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Experimental Evidence of Topological Surface States in Mg3Bi2 Films Grown by Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/36/11/117303 ◽

2019 ◽

Vol 36 (11) ◽

pp. 117303 ◽

Cited By ~ 1

Author(s):

Tong Zhou ◽

Xie-Gang Zhu ◽

Mingyu Tong ◽

Yun Zhang ◽

Xue-Bing Luo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Experimental Evidence ◽

Molecular Beam ◽

Surface States ◽

Topological Surface

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Investigation on the electrical transport properties of highly (00l)-textured Sb2Te3 films deposited by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.4861394 ◽

2014 ◽

Vol 115 (2) ◽

pp. 024307 ◽

Cited By ~ 15

Author(s):

Xiangpeng Zhang ◽

Zhigang Zeng ◽

Chao Shen ◽

Ziqiang Zhang ◽

Zhichong Wang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Transport Properties ◽

Electrical Transport ◽

Molecular Beam ◽

Electrical Transport Properties

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Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1704 ◽

1998 ◽

Vol 37 (Part 1, No. 4A) ◽

pp. 1704-1708 ◽

Cited By ~ 2

Author(s):

G. Y. Zhao ◽

Hiroshi Ebisu ◽

Tetsuo Soga ◽

Takashi Egawa ◽

Takashi Jimbo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Transport Properties ◽

Electrical Transport ◽

Molecular Beam ◽

Electrical Transport Properties

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Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy

Journal of Applied Physics ◽

10.1063/1.2896636 ◽

2008 ◽

Vol 103 (6) ◽

pp. 066107 ◽

Cited By ~ 11

Author(s):

Young S. Park ◽

Chang M. Park ◽

J. W. Lee ◽

H. Y. Cho ◽

T. W. Kang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Transport Properties ◽

Electrical Transport ◽

Molecular Beam ◽

Electrical Transport Properties

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Growth and Electrical Transport Properties of Organic Semiconductor Thin Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.209.1 ◽

2013 ◽

Vol 209 ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

Arvind Kumar ◽

R. Prasad ◽

A.K. Debnath ◽

Ajay Singh ◽

S. Samanta ◽

...

Keyword(s):

Thin Films ◽

Deposition Rate ◽

Electrical Transport ◽

Smooth Surface ◽

Molecular Beam ◽

Kelvin Probe ◽

Electrical Transport Properties ◽

Semiconductor Thin Films ◽

Different Thickness ◽

Limited Conduction

Hexadecafluorophthalocyanine (F16CuPc) and Cobalt phthalocyanone (CoPc) thin films of different thickness (20-200nm) have been grown by Molecular Beam Epitaxy (MBE) using different deposition rate (0.2 – 1.0 Å/s). For nanowire type growth lower deposition rate and for films of smooth surface higher deposition rate are found suitable. Charge transport (J~V) of CoPc and F16CuPc films is governed by bulk-limited processes with a bias dependent crossover from Ohmic to trap-free space-charge-limited conduction. The mobility (μ) values at 300 K were found 4.5 and 5.5 cm2 V−1 s−1 for CoPc and F16CuPc films respectively. Mechanism of reverse rectification behavior of an organic heterojunction comprising of CoPc and F16CuPc is explained by Kelvin Probe measurement.

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