Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism

2004 ◽  
Vol 48 (4) ◽  
pp. 567-574 ◽  
Author(s):  
M. Bescond ◽  
J.L. Autran ◽  
D. Munteanu ◽  
M. Lannoo
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