Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism
2004 ◽
Vol 48
(4)
◽
pp. 567-574
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Keyword(s):
2010 ◽
Vol 24
(4)
◽
pp. 322-334
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2018 ◽
Vol 43
(S1)
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pp. 607-617
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2004 ◽
pp. 29-32
1999 ◽
Vol 59
(20)
◽
pp. 12847-12852
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1983 ◽
Vol 92
◽
pp. 73-92
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1995 ◽
pp. 525-528
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