Resistive switching characteristics of solution-processed Al–Zn–Sn–O films annealed by microwave irradiation

Solid-State Electronics ◽

10.1016/j.sse.2017.10.029 ◽

2018 ◽

Vol 140 ◽

pp. 122-128 ◽

Cited By ~ 4

Author(s):

Tae-Wan Kim ◽

Il-Jin Baek ◽

Won-Ju Cho

Keyword(s):

Microwave Irradiation ◽

Resistive Switching ◽

Solution Processed ◽

Switching Characteristics

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Investigating Resistive Switching Characteristics in Solution-Processed Aluminum Oxide Layer by Low Thermal Budget Microwave Irradiation

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2017.14839 ◽

2017 ◽

Vol 17 (10) ◽

pp. 7760-7765 ◽

Cited By ~ 3

Author(s):

Il-Jin Baek ◽

Won-Ju Cho

Keyword(s):

Microwave Irradiation ◽

Aluminum Oxide ◽

Oxide Layer ◽

Resistive Switching ◽

Solution Processed ◽

Thermal Budget ◽

Aluminum Oxide Layer ◽

Switching Characteristics ◽

Low Thermal Budget

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Improvement of multi-level resistive switching characteristics in solution-processed AlOx-based non-volatile resistive memory using microwave irradiation

Semiconductor Science and Technology ◽

10.1088/1361-6641/aa9bc8 ◽

2017 ◽

Vol 33 (1) ◽

pp. 015009 ◽

Cited By ~ 6

Author(s):

Seung-Tae Kim ◽

Won-Ju Cho

Keyword(s):

Microwave Irradiation ◽

Resistive Switching ◽

Resistive Memory ◽

Solution Processed ◽

Multi Level ◽

Switching Characteristics

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Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn–Sn–O ReRAMs

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2019.16999 ◽

2019 ◽

Vol 19 (10) ◽

pp. 6099-6105 ◽

Cited By ~ 2

Author(s):

Tae-Wan Kim ◽

Won-Ju Cho

Keyword(s):

Resistive Switching ◽

Solution Processed ◽

Al Addition ◽

Switching Characteristics

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Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications

Solid-State Electronics ◽

10.1016/j.sse.2017.10.030 ◽

2018 ◽

Vol 140 ◽

pp. 129-133 ◽

Cited By ~ 15

Author(s):

Il-Jin Baek ◽

Won-Ju Cho

Keyword(s):

Resistive Switching ◽

Solution Processed ◽

Switching Characteristics ◽

Memory Applications

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Investigation on resistive switching characteristics of SiC and HfOx stacked nonvolatile memory by microwave irradiation

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab3138 ◽

2019 ◽

Vol 34 (9) ◽

pp. 095006 ◽

Cited By ~ 1

Author(s):

Joong-Won Shin ◽

Se-Ho Kim ◽

Won-Ju Cho

Keyword(s):

Microwave Irradiation ◽

Resistive Switching ◽

Nonvolatile Memory ◽

Switching Characteristics

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Improved Uniformity of Resistive Switching Characteristics in Ag/HfO2/Pt ReRAM Device by Microwave Irradiation Treatment

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2014.27.2.81 ◽

2014 ◽

Vol 27 (2) ◽

pp. 81-84

Author(s):

Jang-Han Kim ◽

Ki-Hyun Nam ◽

Hong-Bay Chung

Keyword(s):

Microwave Irradiation ◽

Resistive Switching ◽

Irradiation Treatment ◽

Switching Characteristics

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Effect of UV irradiation on the resistive switching characteristics of low-temperature solution processed ZrO2 RRAM

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac038e ◽

2021 ◽

Author(s):

Yubin Lee ◽

Jungmo Jung ◽

Dongho Shin ◽

James Pak

Keyword(s):

Low Temperature ◽

Uv Irradiation ◽

Resistive Switching ◽

Solution Processed ◽

Temperature Solution ◽

Switching Characteristics

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Resistive Switching Characteristics of Solution-Processed Transparent TiO[sub x] for Nonvolatile Memory Application

Journal of The Electrochemical Society ◽

10.1149/1.3489370 ◽

2010 ◽

Vol 157 (11) ◽

pp. H1042 ◽

Cited By ~ 29

Author(s):

Seungjae Jung ◽

Jaemin Kong ◽

Sunghoon Song ◽

Kwanghee Lee ◽

Takhee Lee ◽

...

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Solution Processed ◽

Switching Characteristics

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Effect of microwave irradiation power on resistive switching performance in solution-processed aluminum oxide resistive memory

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2018.07.014 ◽

2018 ◽

Vol 123 ◽

pp. 52-58 ◽

Cited By ~ 4

Author(s):

Min-Soo Kang ◽

Won-Ju Cho

Keyword(s):

Microwave Irradiation ◽

Aluminum Oxide ◽

Resistive Switching ◽

Resistive Memory ◽

Solution Processed ◽

Switching Performance ◽

Irradiation Power

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Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility

Microelectronic Engineering ◽

10.1016/j.mee.2011.03.054 ◽

2011 ◽

Vol 88 (7) ◽

pp. 1143-1147 ◽

Cited By ~ 23

Author(s):

Seungjae Jung ◽

Jaemin Kong ◽

Sunghoon Song ◽

Kwanghee Lee ◽

Takhee Lee ◽

...

Keyword(s):

Resistive Switching ◽

Next Generation ◽

Solution Processed ◽

Nano Scale ◽

Non Volatile Memory ◽

Volatile Memory ◽

Switching Characteristics

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