Effect of microwave irradiation power on resistive switching performance in solution-processed aluminum oxide resistive memory

2018 ◽  
Vol 123 ◽  
pp. 52-58 ◽  
Author(s):  
Min-Soo Kang ◽  
Won-Ju Cho
Keyword(s):  
Microwave Irradiation ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Performance ◽  
Irradiation Power

Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

2010 ◽  
Vol 3 (9) ◽  
pp. 091101 ◽  
Author(s):  
Jaehoon Song ◽  
Akbar I. Inamdar ◽  
ByeongUk Jang ◽  
Kiyoung Jeon ◽  
YoungSam Kim ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Resistive Switching ◽  
Resistive Memory ◽  
Switching Performance

Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method

2019 ◽  
Vol 158 ◽  
pp. 28-36 ◽  
Author(s):  
Yanfei Qi ◽  
Chun Zhao ◽  
Ce Zhou Zhao ◽  
Wangying Xu ◽  
Zongjie Shen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Solution Processed ◽  
Switching Performance ◽  
Temperature Solution

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers

2021 ◽  
Author(s):  
Zongjie Shen ◽  
Chun Zhao ◽  
Ivona Z Mitrovic ◽  
Cezhou Zhao ◽  
Yina Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
2D Materials ◽  
Solution Processed ◽  
Switching Performance

Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs

2021 ◽  
pp. 1-7
Author(s):  
S. Biswas ◽  
A. D. Paul ◽  
P. Das ◽  
P. Tiwary ◽  
H. J. Edwards ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Switching Performance

Improved Resistive Switching Properties of Solution Processed TiO[sub 2] Thin Films

2010 ◽  
Vol 13 (12) ◽  
pp. H443 ◽  
Author(s):  
Kuyyadi P. Biju ◽  
Xinjun Liu ◽  
El Mostafa Bourim ◽  
Insung Kim ◽  
Seungjae Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Solution Processed
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