Improvement of multi-level resistive switching characteristics in solution-processed AlOx-based non-volatile resistive memory using microwave irradiation

2017 ◽  
Vol 33 (1) ◽  
pp. 015009 ◽  
Author(s):  
Seung-Tae Kim ◽  
Won-Ju Cho
Keyword(s):  
Microwave Irradiation ◽  
Resistive Switching ◽  
Resistive Memory ◽  
Solution Processed ◽  
Multi Level ◽  
Switching Characteristics

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices

2008 ◽  
Vol 47 (4) ◽  
pp. 2701-2703 ◽  
Author(s):  
Li-Feng Liu ◽  
Jin-Feng Kang ◽  
Nuo Xu ◽  
Xiao Sun ◽  
Chen Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Memory ◽  
Switching Characteristics

Dual Resistive Switching Characteristics in Cu$_{x}$Si$_{y}$O Resistive Memory

2012 ◽  
Vol 5 (11) ◽  
pp. 111102 ◽  
Author(s):  
Lingming Yang ◽  
Ying Meng ◽  
Yali Song ◽  
Yi Liu ◽  
Qing Dong ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Memory ◽  
Switching Characteristics
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