Investigations on the effects of plasma-assisted pre-treatment for plasma-assisted chemical vapour deposition TiN coatings on tool steel

2004 ◽  
Vol 461 (2) ◽  
pp. 277-281 ◽  
Author(s):  
K Gammer ◽  
M Stoiber ◽  
J Wagner ◽  
H Hutter ◽  
R Kullmer ◽  
...  
Author(s):  
A. Hatziapostolou ◽  
I. Zergioti ◽  
E. Hontzopoulos ◽  
A. Zervaki ◽  
G. Haidemenopoulos

Author(s):  
A. Delimi

Organosilicon films were deposited on carbon steel samples using remote microwave nitrogen plasma-assisted chemical vapour deposition. The deposits were obtained using TetraMethyDisoloxane monomer mixed with oxygen. The formed films were characterised using electron microprobe analysis, Fourier transformed infrared spectroscopy, contact angle measurements, scanning electron microscopy and atomic force microscopy. The electrochemical properties of the organosilicon coatings were evaluated using gravimetric experiments next to electrochemical tests. A significant increase in the corrosion resistance behaviour of the organosilicon coated carbon steel specimen was found when the samples were immersed in 3% aqueous sodium chloride solutions. Also, the surface pre-treatment process of carbon steel had an important influence on the morphological and electrochemical behaviour. Argon pre-treatment improves significantly the corrosion resistance or organosilicon coated steel samples. Gravimetric tests in particular showed that samples pre-treated with argon result in lower weight loss and decreased corrosion rates compared to interfaces pre-treated with nitrogen plasma. Keywords: PACVD, carbon steel, organ silicon, corrosion, pre-treatment, electrochemical impedance spectroscopy.


2015 ◽  
Vol 1096 ◽  
pp. 22-26
Author(s):  
Efstathios K. Polychroniadis ◽  
Mamour Sall ◽  
N. Chandran

This work was performed on 3C-SiC layers grown on 4H-SiC substrates by chemical vapour deposition after a surface pre-treatment using GeH4 gas. By means of TEM, the effects of different GeH4 fluxes in the 3C layer quality has been studied and compared. An optimal GeH4 flux permits to drastically reduce twin boundaries but another type of defect occurs and has been widely studied in this paper.


1988 ◽  
Vol 165 (1) ◽  
pp. 149-161 ◽  
Author(s):  
D.W. Kim ◽  
Y.J. Park ◽  
J.G. Lee ◽  
John S. Chun

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David

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