Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide ◽  
Experimental Conditions

Zigzag configurations of hafnium carbide nanowires synthesised by chemical vapour deposition below the eutectic temperature

2017 ◽  
Vol 12 (9) ◽  
pp. 664-666 ◽  
Author(s):  
Song Tian ◽  
Zhongtian Liang ◽  
Zitian Cai ◽  
Yulei Zhang ◽  
Xinfa Qiang ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Eutectic Temperature ◽  
Chemical Vapour ◽  
Hafnium Carbide

Chemical vapour deposition of hafnium carbide and characterization of the deposited layers by secondary-neutral mass spectrometry

1994 ◽  
Vol 241 (1-2) ◽  
pp. 356-360 ◽  
Author(s):  
H.F. Ache ◽  
J. Goschnick ◽  
M. Sommer ◽  
G. Emig ◽  
G. Schoch ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide

Chemical Vapour Deposition of Graphene

2016 ◽  
Author(s):  
Joelle Thorgrimson
Keyword(s):  
Silicon Dioxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Large Area ◽  
Experimental Conditions ◽  
New Material ◽  
Nobel Prize In Physics

Write your name on a piece of paper with a pencil and you have just created the hottest new material in physics, namely graphene. Graphene is a single atomic layer of graphite arranged in a perfect network of repeating hexagons. It was discovered in 2004 by Andre Geim and Konstantin Novoselov, who received the 2010 Nobel prize in physics. Because of graphene’s unique two-dimensional nature, it has a variety of interesting properties. For example, graphene’s high crystal quality is the result of extremely flexible interatomic bonds, which create a substance stronger in plane than diamond yet allows planes to bend when a force is applied perpendicular to this plane. The current challenge in this area of study is to make uniform large area films of graphene. A promising method is chemical vapour deposition (CVD) on metal substrates, particularly copper (Cu). An apparatus for CVD of graphene was built and tested. Using a variety of different experimental conditions, the growth of graphene was investigated. Scanning electron microscopy was used as a preliminary diagnostic tool to determine the presence of graphene. The graphene was then transferred from Cu onto silicon dioxide in order to image the sample using optical and Raman spectroscopy. These methods both confirmed that graphene is present. Further work is being done to optimize the growth and transfer methods as well as to test some of graphene’s interesting electrical and mechanical properties.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

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