Electronic and structural properties of the amorphous/crystalline silicon interface

2009 ◽  
Vol 517 (23) ◽  
pp. 6386-6391 ◽  
Author(s):  
J.P. Kleider ◽  
R. Chouffot ◽  
A.S. Gudovskikh ◽  
P. Roca i Cabarrocas ◽  
M. Labrune ◽  
...  
1995 ◽  
Vol 378 ◽  
Author(s):  
Wolfgang Csaszar ◽  
Arthur L. Endrös

AbstractTheory has made great progress during recent years in calculating the fundamental properties of monatomic hydrogen in crystalline silicon. By applying the DLTS and DDLTS method we use the hydrogen-carbon complex which consists of an electronically inactive carbon atom on a substitutional lattice site and a hydrogen atom near the bond-center position to detect theoretically predicted properties of hydrogen in silicon. The results of two independent experiments show that there exists a coupling of the electronic and structural properties of monatomic hydrogen, as predicted by theory.


1995 ◽  
Vol 51 (13) ◽  
pp. 8668-8671 ◽  
Author(s):  
David J. Singh ◽  
Warren E. Pickett

2007 ◽  
Vol 398 (2) ◽  
pp. 248-251 ◽  
Author(s):  
O. Ortiz-Diaz ◽  
M. Jairo Arbey Rodríguez ◽  
F. Fajardo ◽  
D.A. Landínez Téllez ◽  
J. Roa-Rojas

ChemInform ◽  
2007 ◽  
Vol 38 (27) ◽  
Author(s):  
Holger Wolff ◽  
Thomas Bredow ◽  
Martin Lerch ◽  
Heikko Schilling ◽  
Elisabeth Irran ◽  
...  

2001 ◽  
Vol 11 (9) ◽  
pp. 2335-2339 ◽  
Author(s):  
Y. C. Zhou ◽  
X. H. Wang ◽  
Z. M. Sun ◽  
S. Q. Chen

2007 ◽  
Vol 90 (16) ◽  
pp. 164104 ◽  
Author(s):  
P. F. Barbieri ◽  
R. Landers ◽  
F. C. Marques

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