Coupling of Electronic and Structural Properties of Hydrogen in Crystalline Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Wolfgang Csaszar ◽  
Arthur L. Endrös

AbstractTheory has made great progress during recent years in calculating the fundamental properties of monatomic hydrogen in crystalline silicon. By applying the DLTS and DDLTS method we use the hydrogen-carbon complex which consists of an electronically inactive carbon atom on a substitutional lattice site and a hydrogen atom near the bond-center position to detect theoretically predicted properties of hydrogen in silicon. The results of two independent experiments show that there exists a coupling of the electronic and structural properties of monatomic hydrogen, as predicted by theory.

1987 ◽  
Vol 104 ◽  
Author(s):  
A. D. Marwick ◽  
G. S. Oehrlein ◽  
J. H. Barrett ◽  
N. M Johnson

ABSTRACTChanneling and lattice location has been used to investigate the structure of the boron-hydrogen complex in crystalline silicon. The positions of both the boron and hydrogen atoms have been determined. The results are compared with Monte-Carlo simulations. The boron atom in the B-H pair is found to be displaced from a substitutional site by 0.28±0.03Å, while the hydrogen atom is predominantly at a bond-center site, with a small proportion in a back-bonded position.


2009 ◽  
Vol 517 (23) ◽  
pp. 6386-6391 ◽  
Author(s):  
J.P. Kleider ◽  
R. Chouffot ◽  
A.S. Gudovskikh ◽  
P. Roca i Cabarrocas ◽  
M. Labrune ◽  
...  

1995 ◽  
Vol 51 (13) ◽  
pp. 8668-8671 ◽  
Author(s):  
David J. Singh ◽  
Warren E. Pickett

2000 ◽  
Vol 61 (7) ◽  
pp. 4659-4666 ◽  
Author(s):  
P. Johannesen ◽  
B. Bech Nielsen ◽  
J. R. Byberg

2007 ◽  
Vol 398 (2) ◽  
pp. 248-251 ◽  
Author(s):  
O. Ortiz-Diaz ◽  
M. Jairo Arbey Rodríguez ◽  
F. Fajardo ◽  
D.A. Landínez Téllez ◽  
J. Roa-Rojas

ChemInform ◽  
2007 ◽  
Vol 38 (27) ◽  
Author(s):  
Holger Wolff ◽  
Thomas Bredow ◽  
Martin Lerch ◽  
Heikko Schilling ◽  
Elisabeth Irran ◽  
...  

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