2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications

TOTAL DOCUMENTS

97

(FIVE YEARS 97)

H-INDEX

3

(FIVE YEARS 3)

Published By IEEE

9781728109404

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

TCAD Framework to Estimate the NBTI Degradation in FinFET and GAA NSFET Under Mechanical Strain

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870523 ◽

2019 ◽

Author(s):

Ravi Tiwari ◽

Narendra Parihar ◽

Karansingh Thakor ◽

Hiu-Yung Wong ◽

Souvik Mahapatra

Keyword(s):

Mechanical Strain

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RF performance improvement on 22FDX® platform and beyond

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870435 ◽

2019 ◽

Author(s):

Tom Herrmann ◽

Alban Zaka ◽

Nandha Kumar Subramani ◽

Zhixing Zhao ◽

Steffen Lehmann ◽

...

Keyword(s):

Performance Improvement ◽

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Investigation and Modelling of Single-Molecule Organic Transistors

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870484 ◽

2019 ◽

Author(s):

Fabrizio Torricelli ◽

Eleonora Macchia ◽

Paolo Romele ◽

Kyriaki Manoli ◽

Cinzia Di Franco ◽

...

Keyword(s):

Single Molecule ◽

Organic Transistors

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Progress in dislocation stress field model and its appications

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870500 ◽

2019 ◽

Author(s):

Uihui Kwon ◽

Jeong-Guk Min ◽

Seon-Young Lee ◽

Alexander Schmidt ◽

Dae Sin Kim ◽

...

Keyword(s):

Stress Field ◽

Field Model ◽

Dislocation Stress

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On the Simulation of Plasma Waves in HEMTs and the Dyakonov-Shur Instability

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870401 ◽

2019 ◽

Author(s):

Christoph Jungemann ◽

Tobias Linn ◽

Zeinab Kargar

Keyword(s):

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A Quantum Element Reduced Order Model

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870453 ◽

2019 ◽

Author(s):

Ming-C. Cheng

Keyword(s):

Reduced Order Model ◽

Order Model ◽

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SISPAD 2019 Welcome Page

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870376 ◽

2019 ◽

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Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870536 ◽

2019 ◽

Author(s):

Ribhu Sharma ◽

Erin Patlick ◽

Jiancheng Yang ◽

Fan Ren ◽

Mark Law ◽

...

Keyword(s):

Thermal Analysis ◽

High Current ◽

Edge Termination ◽

Schottky Rectifiers

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Simulation of Chemically Reacting Flow in Plasma Native Oxide Cleaning Process

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870447 ◽

2019 ◽

Author(s):

Seung-Min Ryu ◽

Yunho Kim ◽

Dylan Pederson ◽

Jonghyun Lee ◽

Youngkwon Kim ◽

...

Keyword(s):

Native Oxide ◽

Reacting Flow ◽

Cleaning Process ◽

Chemically Reacting ◽

Chemically Reacting Flow

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OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870452 ◽

2019 ◽

Author(s):

Yuxiong Long ◽

Jun Z. Huang ◽

Zhongming Wei ◽

Jun-Wei Luo ◽

Xiangwei Jiang

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