The principal aim of this paper is to propose an easy, vapor phase, and reproducible photo surface treatment method to improve the device performance of the Hg0.8Cd0.2Te photoconductive detector. Experimental results, including Auger electron spectroscopy (AES), MIS leakage current, 1/f noise voltage spectrum, 1/fknee frequency, responsivity Rλ, and specific detectivity D* for stacked photo surface treatment and ZnS or CdTe passivation layers are presented. By using this method, we found that there is no accumulation of Hg in the oxide/HgCdTe interface regions. Since the photo chemical vapor native oxidation is a dry oxidation method deposited at a low temperature, it can effectively suppress the Hg enhancement and the Cd depletion effects and thus obtain a high quality interface. We also found that the photo surface treatment in combination with thermally eveporated ZnS or CdTe layer would shift the 1/fknee under 100Hz in an electrical field under 50 V/cm, reduce the noise power spectrum, and achieve a lower surface recombination velocity S of 300 cm/sec as well as a high D* of 3 × 1010 cm [Formula: see text] for blackbody radiation. It was also found that HgCdTe photoconductor passivated with stacked layers shows improved interface properties when compared to the photoconductor passivated with a single passivation layer.
Reduction of surface recombination velocity by rapid thermal annealing of p-Si passivated by catalytic-chemical vapor deposited alumina films