Iodide Substitution Induced Phase Transition of Chemical Vapor Deposited MoS2

Molybdenum disulfide (MoS2) based electronic devices, particularly field effect transistors, have outstanding performance. However, a large contact resistance between electrode metals and MoS2 limits the full potential of these devices....

Engineering of defects in fast neutron irradiated synthetic diamonds

Chemical vapor deposited (CVD) diamonds have been irradiated with fast reactor neutrons at fluencies F = 1·1018 and 3 · 1018 cm-2 and then heated at temperatures up to 1600 °C. The processes of annealing in and annealing out of various complexes of intrinsic defects responsible for vibrational and electron-vibrational bands in the IR absorption spectra have been studied in detail. Some tens of local vibrational modes and zero-phonon lines with rather small width caused by numerous complexes of intrinsic defects were observed in the 400-11000 cm-1 range.