scholarly journals Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

2001 ◽  
Vol 89 (7) ◽  
pp. 3821-3826 ◽  
Author(s):  
M. J. Kerr ◽  
J. Schmidt ◽  
A. Cuevas ◽  
J. H. Bultman
Keyword(s):  
Solar Cell ◽  
Silicon Nitride ◽  
Silicon Solar Cell ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Chemical Vapor ◽  
Surface Recombination Velocity ◽  
Chemical Vapor Deposited ◽  
Recombination Velocity

scholarly journals Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

2018 ◽  
Vol 09 (02) ◽  
pp. 189-201
Author(s):  
Ousmane Diasse ◽  
Amadou Diao ◽  
Mamadou Wade ◽  
Marcel Sitor Diouf ◽  
Ibrahima Diatta ◽  
...  
Keyword(s):  
Steady State ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Velocity Modeling ◽  
Recombination Velocity

Analytical Model of Thin-Film Silicon Solar Cell

2015 ◽  
Author(s):  
Ashish Sharma ◽  
Sandra Zivanovic ◽  
Shravan R. Animilli ◽  
Dentcho A. Genov
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Kinetic Model ◽  
Silicon Solar Cell ◽  
Surface Recombination ◽  
Thin Film Solar Cells ◽  
Surface Recombination Velocity ◽  
Thin Film Silicon ◽  
Recombination Velocity

There is an important need for improvement in both cost and efficiency of photovoltaic cells. For improved efficiency a better understanding of solar cell performance is required. In this paper we propose an analytical kinetic model of thin-film silicon solar cell, which can provide an intuitive understanding of the effect of illumination on its charge carriers and electric current. The separate cases of homogeneous and inhomogeneous charge carrier generation rates across the device are investigated. Our model also provides for the study of the carrier transport within the quasi-neutral and depletion zones of the device, which is of importance for thin-film solar cells. Two boundary conditions based on (i) fixed surface recombination velocity at the electrodes and (ii) intrinsic conditions for large size devices are explored. The device short circuit current and open circuit voltage are found to increase with the decrease of surface recombination velocity at electrodes. The power conversion efficiency of thin film solar cells is observed to strongly depend on impurity doping concentrations. The developed analytical kinetic model can be used to optimize the design and performance of thin-film solar cells without involving highly complicating numerical codes to solve the corresponding drift-diffusion equations.

Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlOx layers

2012 ◽  
Vol 522 ◽  
pp. 336-339 ◽  
Author(s):  
Pierre Saint-Cast ◽  
Armin Richter ◽  
Etienne Billot ◽  
Marc Hofmann ◽  
Jan Benick ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Chemical Vapor ◽  
Surface Recombination Velocity ◽  
Boron Doped ◽  
Chemical Vapor Deposited ◽  
Recombination Velocity

scholarly journals Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Youngseok Lee ◽  
Woongkyo Oh ◽  
Vinh Ai Dao ◽  
Shahzada Qamar Hussain ◽  
Junsin Yi
Keyword(s):  
Solar Cell ◽  
Thermal Oxidation ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Effective Lifetime ◽  
Silicon Oxide Layer ◽  
Rapid Thermal Oxidation ◽  
Recombination Velocity

It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get highVocby lowering the leakage current (I0) which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2) layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i) layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2thickness.

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