Oxidation state control of solution-processed vanadium oxide thin-films and resistive switching of VO2 thin-film in a metastable state

2018 ◽  
Vol 648 ◽  
pp. 69-75 ◽  
Author(s):  
Joohyung Park ◽  
Kyunghan Ahn ◽  
Seungwoo Yu ◽  
Jihyun An ◽  
Tae Hoon Lee ◽  
...  
2014 ◽  
Vol 105 (22) ◽  
pp. 223515 ◽  
Author(s):  
Shinbuhm Lee ◽  
Tricia L. Meyer ◽  
Sungkyun Park ◽  
Takeshi Egami ◽  
Ho Nyung Lee

2019 ◽  
Vol 8 (3) ◽  
pp. 7899-7902

Vanadium has many oxides (VO2 , V2O3 , V2O4 , V6O13 and V2O5 ) due to high oxidation state. Properties of the vanadium oxide thin films can be changed by pressure, doping and strain. Ion irradiation can transform the phase, mix the two solid materials, form epitaxial crystallization and create nanostructure etc. in the materials. Purpose of our study was to observe the effect of swift heavy ions (SHIs) irradiation on vanadium oxide thin films. Thin films of vanadium oxide were deposited on the Si substrate by reactive RF sputtering technique. As-deposited thin films were irradiated by swift heavy ions (100 MeV Ag ions) at different fluences at room temperature. The effect of ions irradiation was studied by using grazing incidence X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR) and UV-vis-NIR spectrophotometer characterization techniques. GIXRD pattern revealed that swift heavy ions can induce the phase transformation (V6O13 to V2O3 ) in the films. FTIR characterization showed that δ(V=O) stretching mode at 1020 cm-1 shifted to the lower wave number side. Optical properties showed blue shift in the absorption spectra at the higher fluences. These shifting are due to the lowering of vanadium’s oxidation state in the thin films. This change in oxidation state of vanadium transforms the phase of the films. Irradiation with SHIs can transform the phase along with enhancement in the crystallinity of the vanadium oxide films.


2008 ◽  
Vol 8 (5) ◽  
pp. 2604-2608 ◽  
Author(s):  
Y. L. Wang ◽  
M. C. Li ◽  
X. K. Chen ◽  
G. Wu ◽  
J. P. Yang ◽  
...  

Nano-polycrystalline vanadium oxide thin films have been successfully produced by pulsed laser deposition on Si(100) substrates using a pure vanadium target in an oxygen atmosphere. The vanadium oxide thin film is amorphous when deposited at relatively low substrate temperature (500 °C) and enhancing substrate temperature (600–800 °C) appears to be efficient in crystallizing VOx thin films. Nano-polycrystalline V3O7 thin film has been achieved when deposited at oxygen pressure of 8 Pa and substrate temperature of 600 °C. Nano-polycrystalline VO2 thin films with a preferred (011) orientation have been obtained when deposited at oxygen pressure of 0.8 Pa and substrate temperatures of 600–800 °C. The vanadium oxide thin films deposited at high oxygen pressure (8 Pa) reveal a mix-valence of V5+ and V4+, while the VOx thin films deposited at low oxygen pressure (0.8 Pa) display a valence of V4+. The nano-polycrystalline vanadium oxide thin films prepared by pulsed laser deposition have smooth surface with high qualities of mean crystallite size ranging from 30 to 230 nm and Ra ranging from 1.5 to 22.2 nm. Relative low substrate temperature and oxygen pressure are benifit to aquire nano-polycrystalline VOx thin films with small grain size and low surface roughness.


2018 ◽  
Vol 123 (4) ◽  
pp. 044502 ◽  
Author(s):  
Jonathan A. J. Rupp ◽  
Madec Querré ◽  
Andreas Kindsmüller ◽  
Marie-Paule Besland ◽  
Etienne Janod ◽  
...  

2013 ◽  
Vol 62 (4) ◽  
pp. 047201
Author(s):  
Wei Xiao-Ying ◽  
Hu Ming ◽  
Zhang Kai-Liang ◽  
Wang Fang ◽  
Liu Kai

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  

2021 ◽  
Vol 23 (14) ◽  
pp. 8439-8445
Author(s):  
Ying Wang ◽  
Piotr Igor Wemhoff ◽  
Mikołaj Lewandowski ◽  
Niklas Nilius

Electron injection from an STM tip has been used to desorb individual vanadyl groups from vanadium oxide thin films. The underlying mechanism is analyzed from the bias and current dependence of the desorption rate.


2010 ◽  
Vol 16 (S2) ◽  
pp. 1654-1655
Author(s):  
BD Gauntt ◽  
EC Dickey

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


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