3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film

ABSTRACTWe begin by reviewing earlier work involving the epitaxial growth of diluted magnetic semiconductor (DMS) layers, heterostructures and superlattices. We also describe current efforts at introducing new materials – such as Cd1-xMnxSe – to the family of MBE-grown DMS alloys. We then discuss some of the unique properties of DMS materials that make the study of thin film structures attractive, with particular emphasis on two general aspects. First, we look at the new opportunities in magnetism that are provided by epitaxially grown DMS films. Second, we examine some of the novel phenomena made possible by sp-d exchange effects in the context of DMS quantum well structures.

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Mn Diffusion and Reactive Diffusion in Ge: Spintronic Applications

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.363.56 ◽

2015 ◽

Vol 363 ◽

pp. 56-61

Author(s):

Alain Portavoce ◽

Omar Abbes ◽

Sylvain Bertaina ◽

Yauheni Rudzevich ◽

Lee Chow ◽

...

Keyword(s):

Thin Film ◽

Solid State ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Solubility Limit ◽

Reactive Diffusion ◽

Thermally Stable ◽

Ferromagnetic Properties ◽

Mn Diffusion ◽

Diluted Magnetic

In this paper, we report investigations concerning the fabrication of a diluted Ge (Mn) solution using solid state Mn diffusion, and Mn/Ge reactive diffusion for spintronic applications. The study of Mn diffusion shows that the quasi-totality of the incorporated Mn atoms occupies Ge substitutional sites and probably exhibits two negative elementary charges. The solubility limit of Mn in Ge is comprised between 0.7 and 0.9 % (T  600 °C). We show that substitutional Mn atoms are not ferromagnetic in Ge and consequently that Ge (Mn) diluted magnetic semiconductor can not be produced. Beside the ferromagnetic signal from Mn5Ge3, ferromagnetic signals detected in the samples could be always attributed to surface or bulk Mn-Ge clusters. Furthermore, we show that the CMOS Salicide process is potentially applicable to Mn5Ge3 nanolayer fabrication on Ge for spintronic applications. During Mn (thin-film)/Ge reaction, Mn5Ge3 is the first phase to form, being thermally stable up to 310 °C and exhibiting ferromagnetic properties up to TC ~ 300 K.

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Structural and Optical Properties of ZnCoO Thin Film Prepared by Electrodeposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.781-784.323 ◽

2013 ◽

Vol 781-784 ◽

pp. 323-326 ◽

Cited By ~ 1

Author(s):

Ping Cao ◽

Yue Bai

Keyword(s):

Thin Film ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

X Ray Diffraction ◽

X Ray ◽

Cathodic Electrodeposition ◽

Uv Emission ◽

Diluted Magnetic ◽

Zno Crystal ◽

Zn Ions

An oxide diluted magnetic semiconductor, Co doped ZnO thin film was successfully fabricated by cathodic electrodeposition method. X-ray diffraction studies demonstrate that the ZnCoO thin film indicates that the wurtzite structure. X-ray photospectroscopy studies suggested Co ions have a chemical valence of 2+. Optical absorption spectrum further confirmed Co ions have been doped into ZnO crystal lattice successfully with substituting positions of Zn ions. In photoluminescence spectrum, the UV emission band shifted to low energy side because of the doping effect.

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