Self-Assembly of GeMn Nanocolumns in GeMn Thin Films

This chapter presents the results of growing GeMn nanocolumns on Ge(001) substrates by means of molecular beam epitaxy (MBE). The samples have been prepared by co-depositing Ge and Mn at growth temperature of 130°C and Mn at concentration of ~6% to ensure the reproduction of GeMn nanocolumns. Based on the observation of changes in reflection high-energy electron diffraction (RHEED) patterns during nanocolumn growth, surface signals of GeMn nanocolumn formation have been identified. Structural analysis using transmission electron microscopy (TEM) show the self-assembled nanocolumns with core-shell structure extend through the whole thickness of the GeMn layer. Most of nanocolumns are oriented perpendicular to the interface along the growth direction. The nanocolumn size has been determined to be about 5–8 nm in diameter and a maximum height of 80 nm. A phenomenological model has been proposed to explain the driving force for self-assembly and growth mechanisms of GeMn nanocolumns. The in-plane or lateral Mn diffusion/segregation is driven by a low solubility of Mn in Ge while the driving force of Mn vertical segregation is induced by the surfactant effect along the [001] direction.

Effect of Austenitization Conditions on the Transformation Behavior of Low Carbon Steel Containing Ti–Ca Oxide Particles

Inclusion-induced acicular ferrite (AF) nucleation has been used for microstructure refinement in steel. Austenitization conditions have a significant influence on AF nucleation ability. In this paper, the effects of austenitization temperature and holding time on the transformation behaviors of low carbon steel containing Ti–Ca oxide particles were studied. A thermal treatment experiment, high temperature in situ observation, and calculation of Mn diffusion were carried out. The results indicate that small austenite grain size under low austenitizing temperature promoted grain boundary reaction products. With an increase in austenitizing temperature, the nucleation sites transferred to intragranular particles and AF transformation was improved. The inclusion particles in the Ti–Ca deoxidized steel were featured by an oxide core rich in Ti and a lesser amount of Ca and with MnS precipitation on the local surface, which showed a strong ability to promote AF nucleation. At a low austenitizing temperature, Mn diffusion was limited and the development of Mn-depleted zones (MDZs) around inclusions was not sufficient. The higher diffusion capacity of Mn at a high austenitizing temperature promoted the formation of MDZs to a larger degree and increased the AF nucleation ability. Boron segregation at large-sized austenite grain boundaries played an important role in AF transformation. Austenite grain size, Mn-depleted zone development, and boron segregation at grain boundaries were the decisive factors influencing the transformation behaviors under different austenitization conditions for the test steel.

Mn Diffusion and Reactive Diffusion in Ge: Spintronic Applications

In this paper, we report investigations concerning the fabrication of a diluted Ge (Mn) solution using solid state Mn diffusion, and Mn/Ge reactive diffusion for spintronic applications. The study of Mn diffusion shows that the quasi-totality of the incorporated Mn atoms occupies Ge substitutional sites and probably exhibits two negative elementary charges. The solubility limit of Mn in Ge is comprised between 0.7 and 0.9 % (T  600 °C). We show that substitutional Mn atoms are not ferromagnetic in Ge and consequently that Ge (Mn) diluted magnetic semiconductor can not be produced. Beside the ferromagnetic signal from Mn5Ge3, ferromagnetic signals detected in the samples could be always attributed to surface or bulk Mn-Ge clusters. Furthermore, we show that the CMOS Salicide process is potentially applicable to Mn5Ge3 nanolayer fabrication on Ge for spintronic applications. During Mn (thin-film)/Ge reaction, Mn5Ge3 is the first phase to form, being thermally stable up to 310 °C and exhibiting ferromagnetic properties up to TC ~ 300 K.

Epitaxial Growth of High Curie-Temperature Ge1-xMnx quantum dots on Si(001) by auto-assembly

We report on successful growth of epitaxial and high Curie-temperature Ge1-xMnx quantum dots on Si (001) substrates using the auto-assembled approach. By reducing the growth temperature down to 400 °C, we show that the Mn diffusion into the Si substrate can be neglected. No indication of secondary phases or clusters was observed. Ge1-xMnx quantum dots were found to be epitaxial and perfectly coherent to the Si substrate. We also observe ferromagnetic ordering in quantum dots at a temperature higher 320 K. It is believed that single-crystalline quantum dots exhibiting a high Curie temperature are potential candidates for spin injection at temperatures higher than room temperature.