AbstractSolution-processed colloidal quantum dot solar cells (CQDSCs) is a promising candidate for new generation solar cells. To obtain stable and high performance lead sulfide (PbS)-based CQDSCs, high carrier mobility and low non-radiative recombination center density in the PbS CQDs active layer are required. In order to effectively improve the carrier mobility in PbS CQDs layer of CQDSCs, butylamine (BTA)-modified graphene oxide (BTA@GO) is first utilized in PbS-PbX2 (X = I−, Br−) CQDs ink to deposit the active layer of CQDSCs through one-step spin-coating method. Such surface treatment of GO dramatically upholds the intrinsic superior hole transfer peculiarity of GO and attenuates the hydrophilicity of GO in order to allow for its good dispersibility in ink solvent. The introduction of BTA@GO in CQDs layer can build up a bulk nano-heterojunction architecture, which provides a smooth charge carrier transport channel in turn improves the carrier mobility and conductivity, extends the carriers lifetime and reduces the trap density of PbS-PbX2 CQDs film. Finally, the BTA@GO/PbS-PbX2 hybrid CQDs film-based relatively large-area (0.35 cm2) CQDSCs shows a champion power conversion efficiency of 11.7% which is increased by 23.1% compared with the control device.
Scalable fabrication of efficient p-n junction lead sulfide quantum dot solar cells
