Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers

We experimentally studied the influence of both impurity density and dangling-bond density on PL emissions from group-IV-semiconductor quantum-dots (IV-QDs) of Si and SiC fabricated by hot-ion implantation technique, to improve the PL intensity (IPL) from IV-QDs embedded in two types of insulators of quartz glass (QZ) with low impurity density and thermal-oxide (OX) layers. First, we verified the IPL reduction in the IV-QDs in QZ. However, we demonstrated the IPL enhancement of IV-QDs in doped QZ, which is attributable to multiple-level emission owing to acceptor and donor ion implantations into QZ. Secondly, we confirmed the large IPL enhancement of IV-QDs in QZ and OX, owing to forming gas annealing with H2/N2 mixed gas, which are attributable to the reduction of the dangling-bond density in IV-QDs. Consequently, it is possible to improve the IPL of IV-QDs by increasing impurity density and reducing dangling-bond density.

A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve fs·Qm > 3.42 × 1012

This paper presents a micro-electro-mechanical systems (MEMS) processing technology for Aluminum Nitride (AlN) Lamb-wave resonators (LWRs). Two LWRs with different frequencies of 402.1 MHz and 2.097 GHz by varying the top interdigitated (IDT) periods were designed and fabricated. To avoid the shortcomings of the uncontrollable etching of inactive areas during the releasing process and to improve the fabrication yield, a thermal oxide layer was employed below the platted polysilicon sacrificial layer, which could define the miniaturized release cavities well. In addition, the bottom Mo electrode that was manufactured had a gentle inclination angle, which could contribute to the growth of the high-quality AlN piezoelectric layer above the Mo layer and effectively prevent the device from breaking. The measured results show that the IDT-floating resonators with 12 μm and 2 μm electrode periods exhibit a motional quality factor (Qm) as high as 4382 and 1633. The series resonant frequency (fs)·Qm values can reach as high as 1.76 × 1012 and 3.42 × 1012, respectively. Furthermore, Al is more suitable as the top IDT material of the AlN LWRs than Au, and can contribute to achieving an excellent electrical performances due to the smaller density, smaller thermo-elastic damping (TED), and larger acoustic impedance difference between Al and AlN.

Electrochemical corrosion resistance of thermal oxide formed on anodized stainless steel

Purpose The purpose of this paper is to investigate and explain thermal oxide effect on electrochemical corrosion resistance anodized stainless steel (SS). Design/methodology/approach Electrochemical corrosion resistance of thermal oxides produced on anodized 304 SS in air at 350°C, 550°C, 750°C and 950°C in 3.5 wt.% NaCl solution have been investigated by dynamic potential polarization, EIS and double-loop dynamic polarization. Anodized 304 SS were obtained by anodization at the constant density of 1.4 mA.cm-2 in the solution containing 28.0 g.L-1H3PO4, 20.0 g.L-1C6H8O7, 200.0 g.L-1H2O2 at 70°C for 50 min. SEM and EDS had been also used to characterize the thermal oxides and passive oxide. Findings Interestingly, anodized 304SS with thermal oxide produced at 350°C displayed more electrochemical corrosion and pitting resistance than anodized 304 SS only with passive oxide, as related to the formation of oxide film with higher chromium to iron ratio. Whereas, anodized 304SS with thermal oxide formed at 950°C shows the worse electrochemical corrosion and pitting resistance among those formed at the high temperatures due to thermal oxide with least compact. Originality/value When thermally oxidized in the range of 350°C–950°C, electrochemical corrosion and pitting corrosion resistance of anodized 304 SS decrease with the increase of temperature due to less compactness, more defects of thermal oxide.

Synergistic Regulation Mechanism of Inorganic Thermal Oxidation Coating and Poly (Vinylphosphonic Acid) (PVPA) Coating for High Load Bearing Superlubricity

A low friction coefficient and high bearing capacity can improve the service life of implants in the human body. In this study, we firstly investigate the mechanical properties of inorganic thermal oxide coatings on titanium alloy (Ti6Al4V). Tribological experiments were performed for different tribo-pairs under uniform conditions. The inorganic thermal oxide coating on Ti6Al4V formed at 300℃ was found to have excellent tribological properties and can effectively improve the bearing capacity of Ti6Al4V. The organic poly (vinylphosphonic acid) (PVPA) on Ti6Al4V has excellent anti-friction properties, which can help achieve superlubricity. An inorganic thermal oxide/organic PVPA composite coating was fabricated on Ti6Al4V to obtain a surface with low friction and high bearing capacity. It is found that the presence of the thermal oxide doubled the bearing capacity of the composite coating compared to that of the PVPA coating alone. This study can serve as a guide for the modification of artificial joints.

Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO2/4H-SiC Interface

In this work, the potential of muon spin rotation (μSR) with low-energy muons (LE-μ) for the investigation of oxidation-induced defects at the SiO2/4H-SiC interface is explored. By using implantation energies for the muons in the keV range and comparing the fractions of muonium in different regions, the depth distribution of defects in the first 200 nm of the target material can be resolved. Defect profiles of interfaces with either deposited or thermally grown SiO2 layers on 4H-SiC are compared. The results show an increased number of defects in the case of a thermal oxide, both on the oxide and on the SiC side of the interface, with a spatial extension of a few tens of nm.