Electrical synaptic transmission is an essential form of interneuronal communication, mediated by gap junctions that permit ion flow. Three gene families (connexins, innexins, and pannexins) have evolved to form gap junctional channels. Each gap junctional channel is formed by the docking of the hemichannel of one cell with the corresponding hemichannel of an adjacent cell. To date, there is a lack of models describing this structure in detail. In this study, we demonstrate that numerical simulations suggest that the passive transmembrane ion transport model, based on the generality of ion channels, also applies to hemichannels in non-junctional plasma membranes. On this basis, we established a gap junctional channel model, which describes hemichannels' docking. We simulated homotypic and heterotypic gap junctions formed by connexins, innexins, and pannexins. Based on the numerical results and our theoretical model, we discussed the physiology of hemichannels and gap junctions, including ion blockage of hemichannels, voltage gating of gap junctions, and asymmetry and delay of electrical synaptic transmission, for which the numerical simulations are first comprehensively realized.
Properties of the Stochastic Energization-Relaxation Channel Model for Vectorial Ion Transport
