Low temperature growth of vertically aligned carbon nanotubes by thermal chemical vapor deposition

2001 ◽  
Vol 338 (2-3) ◽  
pp. 113-117 ◽  
Author(s):  
Cheol Jin Lee ◽  
Kwon Hee Son ◽  
Jeunghee Park ◽  
Jae Eun Yoo ◽  
Yoon Huh ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Temperature Growth ◽  
Vertically Aligned Carbon Nanotubes ◽  
Thermal Chemical Vapor Deposition ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

Electron Emission of Vertically Aligned Carbon Nanotubes Grown on a Large Area Silicon Substrate by Thermal Chemical Vapor Deposition

2000 ◽  
Vol 621 ◽  
Author(s):  
Cheol J. Lee ◽  
Jung H. Park ◽  
Kwon H. Son ◽  
Dae W. Kim ◽  
Tae J. Lee ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Carbonaceous Particles ◽  
Vertically Aligned Carbon Nanotubes ◽  
Thermal Chemical Vapor Deposition ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

ABSTRACTWe have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapor deposition using C2H2 gas. The carbon nanotubes grown by the thermal chemical vapor deposition are multi-wall structure, and the wall surface of nanotubes is covered with defective graphite sheets or carbonaceous particles. The carbon nanotubes range from 50 to 120 nm in diameter and about 130 μm in length at 950 °C. Steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically. The turn-on voltage was about 0.8 V/μm with a current density of 0.1 μA/cm2 and emission current reveals the Fowler-Nordheim mode.

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