Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

2000 ◽  
Vol 217 (4) ◽  
pp. 355-359 ◽  
Author(s):  
M.H Zhang ◽  
Y.J Han ◽  
Y.H Zhang ◽  
Q Huang ◽  
C.L Bao ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Point Defects ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Low Temperature Grown Gaas

Sharp Exciton Photoluminescence in Low-Temperature-Grown GaAs/AlGaAs Multiple Quantum Wells

2002 ◽  
Vol 41 (Part 1, No. 6A) ◽  
pp. 3762-3765
Author(s):  
Liwei Guo ◽  
Yinjun Han ◽  
Changlin Bao ◽  
Daoyang Dai ◽  
Qi Huang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Low Temperature Grown Gaas

scholarly journals Femtosecond response time in beryllium-doped low-temperature-grown GaAs/AlAs multiple quantum wells

2001 ◽  
Vol 79 (6) ◽  
pp. 764-766 ◽  
Author(s):  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto ◽  
Yasushi Sakuma ◽  
Yuuichi Hayasaki ◽  
Hiroshi Okamoto
Keyword(s):  
Low Temperature ◽  
Response Time ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Low Temperature Grown Gaas

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum
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