Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)
1998 ◽
Vol 189-190
◽
pp. 78-82
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1999 ◽
Vol 59
(1-3)
◽
pp. 104-111
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1999 ◽
Vol 4
(S1)
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pp. 441-446
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Keyword(s):
2003 ◽
Vol 252
(1-3)
◽
pp. 9-13
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Keyword(s):
1998 ◽
Vol 37
(Part 2, No. 7B)
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pp. L845-L848
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Keyword(s):
2013 ◽
Vol 52
(8S)
◽
pp. 08JC06
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Keyword(s):
2005 ◽
Vol 276
(3-4)
◽
pp. 439-445
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