Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

1999 ◽  
Vol 59 (1-3) ◽  
pp. 104-111 ◽  
Author(s):  
Kazumasa Hiramatsu ◽  
Hidetada Matsushima ◽  
Takumi Shibata ◽  
Yasutoshi Kawagachi ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Selective Area Growth ◽  
Lateral Overgrowth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask

1998 ◽  
Vol 537 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Shingo Nambu ◽  
Hiroki Sone ◽  
Masahito Yamaguchi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Selective Area Growth ◽  
Crystal Axis ◽  
Lateral Overgrowth ◽  
Selective Area ◽  
Area Growth

AbstractSelective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1100> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <1120> and <1100> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.

scholarly journals Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask

1999 ◽  
Vol 4 (S1) ◽  
pp. 441-446 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Shingo Nambu ◽  
Hiroki Sone ◽  
Masahito Yamaguchi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Selective Area Growth ◽  
Crystal Axis ◽  
Lateral Overgrowth ◽  
Selective Area ◽  
Area Growth ◽  
Image Position

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1 00> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <11 0> and <1 00> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

2020 ◽  
Vol 20 (4) ◽  
pp. 2232-2239 ◽  
Author(s):  
Mohammed Zeghouane ◽  
Geoffrey Avit ◽  
Yamina André ◽  
Thierry Taliercio ◽  
Pierre Ferret ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Morphological Control ◽  
Selective Area ◽  
Area Growth

scholarly journals Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy

2020 ◽  
pp. 2000447
Author(s):  
Axel Strömberg ◽  
Prakhar Bhargava ◽  
Zhehan Xu ◽  
Sebastian Lourdudoss ◽  
Yan-Ting Sun
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Gaas On Si ◽  
Selective Area ◽  
Area Growth

Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy

2003 ◽  
Vol 252 (1-3) ◽  
pp. 9-13 ◽  
Author(s):  
X.M. Shen ◽  
G. Feng ◽  
B.S. Zhang ◽  
L.H. Duan ◽  
Y.T. Wang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 2, No. 7B) ◽  
pp. L845-L848 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Shingo Nambu ◽  
Hiroki Sone ◽  
Takumi Shibata ◽  
Hidetada Matsushima ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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