Selective Area Growth of Semipolar (202̄1) and (202̄1̄) GaN Substrates by Metalorganic Vapor Phase Epitaxy

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JC06 ◽  
Author(s):  
Daiki Jinno ◽  
Bei Ma ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Yuuki Enatsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

2020 ◽  
Vol 709 ◽  
pp. 138125
Author(s):  
Pattana Suwanyangyaun ◽  
Sakuntam Sanorpim ◽  
Kentaro Onabe
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Cubic Gan

Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask

1998 ◽  
Vol 537 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Shingo Nambu ◽  
Hiroki Sone ◽  
Masahito Yamaguchi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Selective Area Growth ◽  
Crystal Axis ◽  
Lateral Overgrowth ◽  
Selective Area ◽  
Area Growth

AbstractSelective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1100> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <1120> and <1100> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.

Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy

2003 ◽  
Vol 252 (1-3) ◽  
pp. 9-13 ◽  
Author(s):  
X.M. Shen ◽  
G. Feng ◽  
B.S. Zhang ◽  
L.H. Duan ◽  
Y.T. Wang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 2, No. 7B) ◽  
pp. L845-L848 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Shingo Nambu ◽  
Hiroki Sone ◽  
Takumi Shibata ◽  
Hidetada Matsushima ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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