Short-range order in non-stoichiometric amorphous silicon oxynitride and silicon-rich nitride

2002 ◽  
Vol 297 (1) ◽  
pp. 96-101 ◽  
Author(s):  
V.A. Gritsenko ◽  
R.W.M. Kwok ◽  
Hei Wong ◽  
J.B. Xu
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Range Order ◽  
Silicon Oxynitride

Short-range order and luminescence in amorphous silicon oxynitride

2000 ◽  
Vol 80 (10) ◽  
pp. 1857-1868 ◽  
Author(s):  
V. A. Gritsenko, G. Shavalgin, P. A. P
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Range Order ◽  
Silicon Oxynitride

Short Range Order and the Nature of Defects and Traps in Amorphous Silicon Oxynitride Governed by the Mott Rule

1998 ◽  
Vol 81 (5) ◽  
pp. 1054-1057 ◽  
Author(s):  
V. Gritsenko ◽  
J. Xu ◽  
R. Kwok ◽  
Y. Ng ◽  
I. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Range Order ◽  
Silicon Oxynitride

Short-range order and luminescence in amorphous silicon oxynitride

2000 ◽  
Vol 80 (10) ◽  
pp. 1857-1868 ◽  
Author(s):  
V. A. Gritsenko ◽  
Yu. G. Shavalgin ◽  
P. A. Pundur ◽  
Hei Wong ◽  
W. M. Kwok
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Range Order ◽  
Silicon Oxynitride

Short‐range order and microstructure in hydrogenated amorphous silicon

1991 ◽  
Vol 69 (11) ◽  
pp. 7656-7659 ◽  
Author(s):  
P. Danesh ◽  
B. Pantchev ◽  
I. Savatinova ◽  
E. Liarokapis ◽  
Y. S. Raptis
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Hydrogenated Amorphous Silicon ◽  
Range Order ◽  
Hydrogenated Amorphous

Derelaxation of Amorphous Silicon by Ion Implantation: Optical Characterization

1991 ◽  
Vol 235 ◽  
Author(s):  
R. Reitano ◽  
M. G. Grimaldi ◽  
P. Baeri ◽  
E. Bellandi ◽  
A. Borghesi ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Structural Changes ◽  
Low Dose ◽  
Near Infrared ◽  
Ion Irradiation ◽  
Infrared Region ◽  
Range Order ◽  
Density Of State

ABSTRACTThe transition between relaxed and unrelaxed amorphous silicon can be obtained by thermal treatment of the unrelaxed amorphous or by low dose ion irradiation of the relaxed material. In both cases a variation in the short range order has been invoked to explain the behavior of the structural changes probed by various techniques. In this work we study the influence of such changes on the optical properties of a-Si in the region of the transition between the relaxed and the unrelaxed states. We show that a progressive variation of the optical constant in the visible-near infrared region upon derelaxation occurs. Therefore, significant modifications of the electron density of state in the region above the optical gap are associated with the changes in the short range order probed by Raman spectroscopy.

Quantifying the Short-Range Order in Amorphous Silicon by Raman Scattering

2018 ◽  
Vol 90 (13) ◽  
pp. 8123-8129 ◽  
Author(s):  
Priyanka Yogi ◽  
Manushree Tanwar ◽  
Shailendra K. Saxena ◽  
Suryakant Mishra ◽  
Devesh K. Pathak ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Range Order

Short range order variations in amorphous silicon

1988 ◽  
Vol 106 (1-3) ◽  
pp. 128-131 ◽  
Author(s):  
J. Fortner ◽  
J.S. Lannin
Keyword(s):  
Amorphous Silicon ◽  
Short Range ◽  
Short Range Order ◽  
Range Order
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