A simulation-based semiconductor chip yield model incorporating a new defect cluster index

1999 ◽  
Vol 39 (4) ◽  
pp. 451-456 ◽  
Author(s):  
Chi-Hyuck Jun ◽  
Yushin Hong ◽  
Soo Young Kim ◽  
Kwang-Su Park ◽  
Hangyeob Park
2008 ◽  
Vol 25 (1) ◽  
pp. 18-30 ◽  
Author(s):  
Wen-Jie Tsai ◽  
Lee-Ing Tong ◽  
Chung-Ho Wang
Keyword(s):  

Chemistry ◽  
2020 ◽  
Vol 2 (4) ◽  
pp. 937-946
Author(s):  
Sumudu Nimasha ◽  
Sashikesh Ganeshalingam ◽  
Navaratnarajah Kuganathan ◽  
Konstantinos Davazoglou ◽  
Alexander Chroneos

Wollastonite (CaSiO3) is an important mineral that is widely used in ceramics and polymer industries. Defect energetics, diffusion of Ca ions and a solution of dopants are studied using atomistic-scale simulation based on the classical pair potentials. The energetically favourable defect process is calculated to be the Ca-Si anti-site defect cluster in which both Ca and Si swap their atomic positions simultaneously. It is calculated that the Ca ion migrates in the ab plane with an activation energy of 1.59 eV, inferring its slow diffusion. Favourable isovalent dopants on the Ca and Si sites are Sr2+ and Ge4+, respectively. Subvalent doping by Al on the Si site is a favourable process to incorporate additional Ca in the form of interstitials in CaSiO3. This engineering strategy would increase the capacity of this material.


2021 ◽  
Vol 5 (3) ◽  
pp. 57
Author(s):  
Sivanujan Suthaharan ◽  
Poobalasuntharam Iyngaran ◽  
Navaratnarajah Kuganathan

Naturally occurring lithium-rich α-spodumene (α-LiAlSi2O6) is a technologically important mineral that has attracted considerable attention in ceramics, polymer industries, and rechargeable lithium ion batteries (LIBs). The defect chemistry and dopant properties of this material are studied using a well-established atomistic simulation technique based on classical pair-potentials. The most favorable intrinsic defect process is the Al-Si anti-site defect cluster (1.08 eV/defect). The second most favorable defect process is the Li-Al anti-site defect cluster (1.17 eV/defect). The Li-Frenkel is higher in energy by 0.33 eV than the Al-Si anti-site defect cluster. This process would ensure the formation of Li vacancies required for the Li diffusion via the vacancy-assisted mechanism. The Li-ion diffusion in this material is slow, with an activation energy of 2.62 eV. The most promising isovalent dopants on the Li, Al, and Si sites are found to be Na, Ga, and Ge, respectively. The formation of both Li interstitials and oxygen vacancies can be facilitated by doping of Ga on the Si site. The incorporation of lithium is studied using density functional theory simulations and the electronic structures of resultant complexes are discussed.


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